MT29F64G08CBAAAWP-Z:A
| Part Description |
IC FLASH 64GBIT PAR 48TSOP I |
|---|---|
| Quantity | 306 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 48-TSOP I | Memory Format | FLASH | Technology | FLASH - NAND | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 64 Gbit | Access Time | N/A | Grade | Commercial | ||
| Clock Frequency | N/A | Voltage | 2.7V ~ 3.6V | Memory Type | Non-Volatile | ||
| Operating Temperature | 0°C ~ 70°C (TA) | Write Cycle Time Word Page | N/A | Packaging | 48-TFSOP (0.724", 18.40mm Width) | ||
| Mounting Method | Non-Volatile | Memory Interface | Parallel | Memory Organization | 8G x 8 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS3 Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | 3A991B1A | HTS Code | 8542.32.0071 |
Overview of MT29F64G08CBAAAWP-Z:A – 64Gbit Parallel NAND Flash, 48‑TSOP I
The MT29F64G08CBAAAWP-Z:A is a 64 Gbit non-volatile NAND flash memory device from Micron Technology Inc. Implemented as 8G x 8 FLASH NAND with a parallel memory interface, it provides block storage in a 48‑TSOP I package.
Designed for electronic systems that require parallel NAND flash storage, the device supports operation across a 2.7 V to 3.6 V supply range and a commercial ambient temperature range of 0°C to 70°C.
Key Features
- Memory Type Non-volatile FLASH NAND memory providing persistent data retention without power.
- Density & Organization 64 Gbit total capacity organized as 8G × 8 for byte-wide parallel operation.
- Interface Parallel memory interface suitable for systems designed around parallel FLASH access.
- Voltage Supply Operates from 2.7 V to 3.6 V, allowing compatibility with common 3.3 V system rails.
- Package 48‑TSOP I (48‑TFSOP, 0.724" / 18.40 mm width) surface-mount package for compact board-level integration.
- Operating Temperature Rated for ambient operation from 0°C to 70°C (TA), appropriate for commercial-temperature applications.
Typical Applications
- Embedded Systems Provides non-volatile bulk storage where parallel NAND flash memory is required for firmware or data.
- Firmware Storage Suitable for storing firmware images and system code in devices that use parallel flash memory.
- Data Logging Can be used for persistent log and data storage in electronic products operating within the specified temperature and voltage ranges.
- Commercial Electronics Fits board-level designs that need a 64 Gbit parallel NAND solution in a 48‑TSOP I footprint.
Unique Advantages
- High-density non-volatile capacity: 64 Gbit storage enables substantial data or firmware space in a single device.
- Byte-wide organization: 8G × 8 organization supports parallel, byte-oriented access patterns for system compatibility.
- Flexible power range: 2.7 V to 3.6 V operation aligns with common 3.3 V system supplies for straightforward integration.
- Compact TSOP package: 48‑TSOP I package (18.40 mm width) delivers a space-efficient footprint for PCB layouts.
- Commercial temperature rating: 0°C to 70°C ambient rating matches typical commercial‑grade electronic applications.
Why Choose IC FLASH 64GBIT PAR 48TSOP I?
The MT29F64G08CBAAAWP-Z:A combines Micron's NAND flash technology with a parallel interface and a compact 48‑TSOP I package to deliver 64 Gbit of non-volatile storage suited to commercial electronic designs. Its 8G × 8 memory organization and 2.7 V–3.6 V supply make it a practical choice for systems that require byte-wide parallel access and compatibility with common system voltages.
This device is appropriate for designers seeking a straightforward, high-density parallel NAND solution from an established memory manufacturer for applications operating within a 0°C to 70°C ambient range.
Request a quote or contact sales to discuss availability, pricing, and lead times for the MT29F64G08CBAAAWP-Z:A.
