MT29F64G08CBAABWP-12Z:A
| Part Description |
IC FLASH 64GBIT PAR 48TSOP I |
|---|---|
| Quantity | 670 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 48-TSOP I | Memory Format | FLASH | Technology | FLASH - NAND | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 64 Gbit | Access Time | N/A | Grade | Commercial | ||
| Clock Frequency | 83 MHz | Voltage | 2.7V ~ 3.6V | Memory Type | Non-Volatile | ||
| Operating Temperature | 0°C ~ 70°C (TA) | Write Cycle Time Word Page | N/A | Packaging | 48-TFSOP (0.724", 18.40mm Width) | ||
| Mounting Method | Non-Volatile | Memory Interface | Parallel | Memory Organization | 8G x 8 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS3 Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | 3A991B1A | HTS Code | 8542.32.0071 |
Overview of MT29F64G08CBAABWP-12Z:A – IC FLASH 64GBIT PAR 48TSOP I
The MT29F64G08CBAABWP-12Z:A is a 64 Gbit non-volatile NAND flash memory device organized as 8G × 8. It provides parallel flash memory storage with a specified clock frequency of 83 MHz and operates from a 2.7 V to 3.6 V supply.
This device is suited to applications that require parallel NAND flash storage in a compact 48-TSOP I package and is specified for an ambient operating temperature range of 0°C to 70°C.
Key Features
- Memory Type Non-volatile NAND flash technology with a total capacity of 64 Gbit (8G × 8) for persistent data storage.
- Interface Parallel memory interface for direct parallel access to the flash array.
- Performance Specified clock frequency of 83 MHz to coordinate parallel memory transactions.
- Power Operates from a 2.7 V to 3.6 V supply range.
- Package 48-TSOP I package (0.724", 18.40 mm width) providing a compact form factor for board-level integration.
- Operating Temperature Rated for ambient operation from 0°C to 70°C (TA).
Typical Applications
- Embedded Storage: Use where 64 Gbit parallel NAND flash is required for persistent program or data storage.
- Consumer Devices: Integration in devices that operate within a 0°C to 70°C ambient temperature range and require parallel flash memory.
- Data Logging and Backup: Systems needing non-volatile memory retention with a standard supply voltage range of 2.7 V to 3.6 V.
Unique Advantages
- High-density NAND storage: 64 Gbit capacity supports large data or code storage in a single device.
- Parallel interface: Enables direct parallel access to the memory array for designs that use parallel flash architectures.
- Standard clocking: 83 MHz clock frequency specification for predictable timing in system designs.
- Flexible supply voltage: 2.7 V to 3.6 V range allows use with common 3 V system rails.
- Compact TSOP package: 48-TSOP I (18.40 mm width) helps maintain a small PCB footprint.
Why Choose MT29F64G08CBAABWP-12Z:A?
The MT29F64G08CBAABWP-12Z:A combines 64 Gbit of NAND flash density with a parallel interface and a defined 83 MHz clocking specification, making it a straightforward choice for designs that require on-board parallel flash memory. Its 48-TSOP I package and 2.7 V to 3.6 V operating range support compact integration on standard 3 V systems.
This device is appropriate for customers seeking a verifiable, specification-driven NAND flash component for applications operating within a 0°C to 70°C ambient range. Its form factor and electrical specifications provide predictable integration for system-level planning and BOM definition.
Request a quote or contact sales to discuss availability, pricing, and lead time for the MT29F64G08CBAABWP-12Z:A.
