MT29F64G08CBAAAWP-Z:A TR
| Part Description |
IC FLASH 64GBIT PAR 48TSOP I |
|---|---|
| Quantity | 1,822 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 48-TSOP I | Memory Format | FLASH | Technology | FLASH - NAND | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 64 Gbit | Access Time | N/A | Grade | Commercial | ||
| Clock Frequency | N/A | Voltage | 2.7V ~ 3.6V | Memory Type | Non-Volatile | ||
| Operating Temperature | 0°C ~ 70°C (TA) | Write Cycle Time Word Page | N/A | Packaging | 48-TFSOP (0.724", 18.40mm Width) | ||
| Mounting Method | Non-Volatile | Memory Interface | Parallel | Memory Organization | 8G x 8 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS3 Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | 3A991B1A | HTS Code | 8542.32.0071 |
Overview of MT29F64G08CBAAAWP-Z:A TR – IC FLASH 64GBIT PAR 48TSOP I
The MT29F64G08CBAAAWP-Z:A TR is a non-volatile NAND flash memory device organized as 8G × 8 for a total density of 64 Gbit. It implements a parallel memory interface in a 48-TSOP I package and is designed for applications requiring onboard NAND flash storage.
Key attributes include a 2.7 V–3.6 V supply range and an ambient operating temperature range of 0 °C to 70 °C, making it suitable for standard commercial temperature environments where parallel NAND storage is required.
Key Features
- Memory Type Non-volatile FLASH (NAND) memory providing persistent data storage without power.
- Memory Organization and Size Organized as 8G × 8 for a total memory size of 64 Gbit.
- Interface Parallel memory interface for direct parallel data communication.
- Package Supplied in a 48-TSOP I package (48-TFSOP, 0.724" / 18.40 mm width) for board-level mounting.
- Voltage Supply Operates from 2.7 V to 3.6 V, compatible with standard 3.3 V systems.
- Operating Temperature Rated for ambient operation from 0 °C to 70 °C (TA), suitable for commercial temperature applications.
Typical Applications
- Embedded Storage Provides non-volatile NAND storage for embedded systems that require parallel flash memory.
- Consumer Electronics Supports devices that integrate local NAND flash for firmware, data logging, or media storage within commercial temperature limits.
- Industrial and Instrumentation Suited for instruments and industrial equipment operating in standard commercial temperature ranges needing onboard non-volatile memory.
Unique Advantages
- High-density capacity: 64 Gbit density enables substantial on-board storage without multiple devices.
- Parallel interface: Parallel memory interface allows direct bus connection where parallel flash is required.
- Standard supply voltage: 2.7 V–3.6 V operation aligns with common 3.3 V system rails for straightforward power integration.
- Compact TSOP footprint: 48-TSOP I package with 18.40 mm width provides a defined form factor for PCB layout and assembly.
- Commercial temperature rating: 0 °C–70 °C operating range targets typical commercial applications and deployments.
Why Choose IC FLASH 64GBIT PAR 48TSOP I?
The MT29F64G08CBAAAWP-Z:A TR positions itself as a high-density, parallel NAND flash option in a compact 48-TSOP I package for designs that require 64 Gbit of non-volatile storage. Its 8G × 8 organization, 2.7 V–3.6 V supply range, and commercial temperature rating make it suitable for systems that need straightforward integration of parallel NAND memory.
This device is appropriate for engineers and procurement teams specifying on-board NAND flash where package size, voltage compatibility, and memory density are key selection criteria.
If you would like pricing information or to request a quote for MT29F64G08CBAAAWP-Z:A TR, please submit a quote request or contact sales for availability and lead-time details.
