MT29F64G08CBAAAWP-IT:A TR
| Part Description |
IC FLASH 64GBIT PAR 48TSOP I |
|---|---|
| Quantity | 115 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 48-TSOP I | Memory Format | FLASH | Technology | FLASH - NAND | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 64 Gbit | Access Time | N/A | Grade | Industrial | ||
| Clock Frequency | N/A | Voltage | 2.7V ~ 3.6V | Memory Type | Non-Volatile | ||
| Operating Temperature | -40°C ~ 85°C (TA) | Write Cycle Time Word Page | N/A | Packaging | 48-TFSOP (0.724", 18.40mm Width) | ||
| Mounting Method | Non-Volatile | Memory Interface | Parallel | Memory Organization | 8G x 8 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS3 Compliant | REACH Compliance | REACH Unknown | ||
| Qualification | N/A | ECCN | 3A991B1A | HTS Code | 8542.32.0071 |
Overview of MT29F64G08CBAAAWP-IT:A TR – IC FLASH 64GBIT PAR 48TSOP I
The MT29F64G08CBAAAWP-IT:A TR is a 64 Gbit non-volatile NAND flash memory organized as 8G x 8. It implements parallel NAND flash architecture in a 48-TSOP I package and is intended for designs that require high-density, board-mounted non-volatile storage.
Key device attributes include a 64 Gbit memory size, parallel memory interface, 2.7 V–3.6 V supply range, and an operating temperature range of −40°C to 85°C, providing a compact memory option for industrial-temperature applications.
Key Features
- Memory Type Non-volatile FLASH NAND memory providing persistent storage without external power.
- Density & Organization 64 Gbit capacity organized as 8G × 8 for high-density storage on a single device.
- Interface Parallel memory interface for direct parallel access to NAND flash arrays.
- Voltage Supply Operates from 2.7 V to 3.6 V, supporting common system power rails.
- Package 48-TFSOP (48-TSOP I) package with an 18.40 mm width (0.724") for board-level integration.
- Operating Temperature Rated for −40°C to 85°C (TA), suitable for systems requiring industrial-temperature operation.
Unique Advantages
- High storage density: 64 Gbit capacity enables significant non-volatile storage in a single package, reducing board space required for memory.
- Parallel interface simplicity: Parallel NAND access supports straightforward integration with parallel memory controllers and legacy interfaces.
- Wide supply range: 2.7 V–3.6 V operation matches common system voltages, simplifying power design.
- Industrial temperature support: −40°C to 85°C operating range supports deployment in temperature-challenging environments.
- Compact TSOP footprint: 48-TSOP I package provides a standardized form factor for board-level mounting and assembly.
Why Choose IC FLASH 64GBIT PAR 48TSOP I?
The MT29F64G08CBAAAWP-IT:A TR positions itself as a high-density, parallel NAND flash option for designs that need 64 Gbit of persistent storage in a compact 48-TSOP I package. With a broad supply voltage window and an industrial operating temperature range, it is suitable for systems that require robust non-volatile memory while maintaining a standardized board footprint.
This device is appropriate for engineers and procurement teams specifying parallel NAND flash where capacity, package form factor, and temperature range are primary selection criteria. Its combination of density, package, and electrical range supports scalable BOM decisions and consistent integration across industrial-temperature designs.
Request a quote or submit a pricing inquiry to receive availability and lead-time information for the MT29F64G08CBAAAWP-IT:A TR.
