MT29F64G08CBAAAWP:A
| Part Description |
IC FLASH 64GBIT PAR 48TSOP I |
|---|---|
| Quantity | 575 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 48-TSOP I | Memory Format | FLASH | Technology | FLASH - NAND | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 64 Gbit | Access Time | N/A | Grade | Commercial | ||
| Clock Frequency | N/A | Voltage | 2.7V ~ 3.6V | Memory Type | Non-Volatile | ||
| Operating Temperature | 0°C ~ 70°C (TA) | Write Cycle Time Word Page | N/A | Packaging | 48-TFSOP (0.724", 18.40mm Width) | ||
| Mounting Method | Non-Volatile | Memory Interface | Parallel | Memory Organization | 8G x 8 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS3 Compliant | REACH Compliance | REACH Unknown | ||
| Qualification | N/A | ECCN | 3A991B1A | HTS Code | 8542.32.0071 |
Overview of MT29F64G08CBAAAWP:A – 64 Gbit Parallel NAND Flash, 48‑TSOP I
The MT29F64G08CBAAAWP:A from Micron Technology Inc. is a 64 Gbit non-volatile FLASH memory device using NAND architecture in a parallel memory format. It provides a byte-wide memory organization (8G × 8) targeted for designs that require dense, parallel-access storage in a compact TSOP package.
With a 48‑TFSOP (48‑TSOP I) package and a 2.7V–3.6V supply range, this device is suitable for systems operating within the specified commercial temperature range (0°C to 70°C). It is intended for applications that need high-density NAND flash memory in a parallel interface form factor.
Key Features
- Memory Type & Technology Non-volatile FLASH memory using NAND architecture, providing persistent storage without external power.
- Density & Organization 64 Gbit capacity organized as 8G × 8 for byte-wide access.
- Interface Parallel memory interface for systems designed around parallel flash access.
- Supply Voltage Operates from 2.7V to 3.6V, supporting common 3.3V-based designs.
- Package 48‑TFSOP / 48‑TSOP I package with a 0.724" (18.40 mm) width, suitable for PCB layouts requiring an industry-standard TSOP footprint.
- Operating Temperature Specified for 0°C to 70°C (TA) operation for commercial-temperature environments.
Unique Advantages
- High-density storage: 64 Gbit capacity delivers substantial non-volatile storage in a single device, reducing the need for multiple components.
- Byte-wide organization: 8G × 8 memory organization supports straightforward byte-oriented data access patterns.
- Parallel interface compatibility: Parallel memory interface simplifies integration into systems designed for parallel FLASH access.
- Flexible supply range: 2.7V–3.6V operation accommodates common 3.3V power domains.
- Compact TSOP packaging: 48‑TFSOP (0.724", 18.40 mm width) enables dense PCB placement while using a standard TSOP I footprint.
- Commercial temperature rating: Specified operation from 0°C to 70°C for typical commercial applications.
Why Choose IC FLASH 64GBIT PAR 48TSOP I?
The MT29F64G08CBAAAWP:A offers a balanced combination of high-capacity NAND storage, a byte-wide organization, and a parallel interface in a standard 48‑TSOP I package. These characteristics make it suitable for designs that require dense, parallel-access non-volatile memory within common 3.3V power systems and commercial temperature environments.
Designed and manufactured by Micron Technology Inc., this device is appropriate for engineers and procurement teams seeking a straightforward, high-density parallel NAND flash option that fits established TSOP footprints and voltage domains.
Request a quote or submit an inquiry for pricing and availability of the MT29F64G08CBAAAWP:A to receive technical and commercial details tailored to your project needs.
