MT29F64G08CBABAL84A3WC1
| Part Description |
IC FLASH 64GBIT PARALLEL DIE |
|---|---|
| Quantity | 283 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | Die | Memory Format | FLASH | Technology | FLASH - NAND | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 64 Gbit | Access Time | N/A | Grade | Commercial | ||
| Clock Frequency | N/A | Voltage | 2.7V ~ 3.6V | Memory Type | Non-Volatile | ||
| Operating Temperature | 0°C ~ 70°C (TA) | Write Cycle Time Word Page | N/A | Packaging | Die | ||
| Mounting Method | Non-Volatile | Memory Interface | Parallel | Memory Organization | 8G x 8 | ||
| Moisture Sensitivity Level | N/A | RoHS Compliance | Unknown | REACH Compliance | REACH Unknown | ||
| Qualification | N/A | ECCN | OBSOLETE | HTS Code | 0000.00.0000 |
Overview of MT29F64G08CBABAL84A3WC1 – IC FLASH 64Gbit Parallel Die
The MT29F64G08CBABAL84A3WC1 is a 64 Gbit non-volatile flash memory organized as 8G × 8 and implemented in a die package. It uses NAND flash technology with a parallel memory interface and operates from a 2.7 V to 3.6 V supply.
This device is intended for designs that require high-density NAND flash storage in a die form factor, offering straightforward integration where a parallel interface and specified operating temperature range are compatible with system requirements.
Key Features
- Memory Type Non-volatile NAND flash memory providing persistent storage.
- Memory Capacity & Organization 64 Gbit capacity arranged as 8G × 8, enabling byte-wide organization.
- Interface Parallel memory interface suitable for designs requiring parallel access to NAND flash.
- Voltage Supply Operates from 2.7 V to 3.6 V, allowing compatibility with common 3 V system rails.
- Package Supplied as a die package for custom integration and advanced packaging workflows.
- Operating Temperature Rated for 0°C to 70°C (TA), suitable for typical commercial-temperature applications.
Typical Applications
- Embedded Storage Used as non-volatile NAND flash storage in embedded systems that require up to 64 Gbit of memory capacity with a parallel interface.
- Firmware and Code Storage Stores firmware or system code where die-level flash integration and byte-wide organization are needed.
- Custom Module Integration Integrated into custom packages or modules that leverage a die form factor for space-optimized designs.
Unique Advantages
- High-density Capacity: 64 Gbit memory size provides significant non-volatile storage in a single die.
- Byte-wide Organization: 8G × 8 memory organization supports byte-oriented access patterns for compatible systems.
- Parallel Interface: Parallel memory interface facilitates integration with designs expecting parallel NAND connectivity.
- Flexible Supply Range: 2.7 V to 3.6 V operation aligns with common 3 V system power rails.
- Die Form Factor: Supplied as a die for custom packaging and integration into higher-level modules or multi-die assemblies.
- Commercial Temperature Rating: 0°C to 70°C operating range for standard commercial applications.
Why Choose IC FLASH 64GBIT PARALLEL DIE?
The MT29F64G08CBABAL84A3WC1 positions itself as a high-density NAND flash die intended for designers who need 64 Gbit of non-volatile storage with a parallel interface and byte-wide organization. Its die packaging and 2.7 V–3.6 V supply range make it suitable for custom integration into modules and systems that accept a die-level component and operate within the specified commercial temperature range.
This product is appropriate for development teams and manufacturers focusing on compact, high-capacity NAND implementations where direct die integration and the listed electrical and environmental specifications are required for system compatibility and long-term deployment.
Request a quote or contact sales to discuss availability, lead times, and pricing for the MT29F64G08CBABAL84A3WC1.
