MT29F64G08CBABAWP-M:B
| Part Description |
IC FLASH 64GBIT PAR 48TSOP I |
|---|---|
| Quantity | 539 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 48-TSOP I | Memory Format | FLASH | Technology | FLASH - NAND | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 64 Gbit | Access Time | N/A | Grade | Commercial | ||
| Clock Frequency | N/A | Voltage | 2.7V ~ 3.6V | Memory Type | Non-Volatile | ||
| Operating Temperature | 0°C ~ 70°C (TA) | Write Cycle Time Word Page | N/A | Packaging | 48-TFSOP (0.724", 18.40mm Width) | ||
| Mounting Method | Non-Volatile | Memory Interface | Parallel | Memory Organization | 8G x 8 | ||
| Moisture Sensitivity Level | 1 (Unlimited) | RoHS Compliance | N/A | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | 3A991B1A | HTS Code | 8542.32.0071 |
Overview of MT29F64G08CBABAWP-M:B – IC FLASH 64GBIT PAR 48TSOP I
The MT29F64G08CBABAWP-M:B is a non-volatile NAND FLASH memory device delivering 64 Gbit of parallel flash storage. It is organized as 8G × 8 and is offered in a 48-TSOP I package.
This device supports a parallel memory interface and operates from a 2.7 V to 3.6 V supply with an ambient operating temperature range of 0°C to 70°C, providing a compact, high-density memory option for designs that require parallel NAND FLASH in a 48-TFSOP footprint.
Key Features
- Memory Type & Technology Non-volatile FLASH - NAND technology for persistent data storage.
- Capacity & Organization 64 Gbit total capacity, organized as 8G × 8 to support byte-wide parallel access.
- Interface Parallel memory interface for systems designed to use parallel FLASH devices.
- Voltage Supply Operates from 2.7 V to 3.6 V, compatible with common 3.0 V systems.
- Package 48-TSOP I (48-TFSOP / 0.724", 18.40 mm width) package for surface-mount PCB integration.
- Operating Temperature Specified ambient range of 0°C to 70°C (TA) for standard temperature applications.
- Manufacturer Produced by Micron Technology Inc.
Typical Applications
- Embedded storage Use as onboard non-volatile storage where a parallel NAND FLASH interface and 64 Gbit capacity are required.
- Firmware and code storage Suitable for storing firmware or boot code in systems that use parallel flash memory organization.
- Memory expansion for parallel systems Provides additional parallel FLASH capacity for designs constrained to a TSOP package footprint.
- Data logging within specified temperature range Persistent data storage for devices operating within 0°C to 70°C ambient conditions.
Unique Advantages
- High-density storage: 64 Gbit capacity in a single 48-TSOP I package reduces PCB area compared to multiple smaller devices.
- Byte-wide organization: 8G × 8 organization enables direct byte-oriented parallel access for compatible system architectures.
- Standard voltage range: 2.7 V to 3.6 V operation fits common 3.0 V system rails for straightforward power integration.
- Compact TSOP package: 48-TFSOP/48-TSOP I package facilitates surface-mount assembly in space-constrained designs.
- Clear thermal specification: Specified 0°C to 70°C operating range simplifies thermal planning for applications within that range.
Why Choose IC FLASH 64GBIT PAR 48TSOP I?
The MT29F64G08CBABAWP-M:B is positioned as a compact, high-density parallel NAND FLASH solution suitable for designs that require 64 Gbit non-volatile storage in a 48-TSOP I package. Its 8G × 8 organization and 2.7 V–3.6 V supply make it appropriate for systems that rely on byte-wide parallel flash access and standard 3.0 V power rails.
Manufactured by Micron Technology Inc., this device is a straightforward option for engineers and procurement teams seeking to integrate parallel FLASH memory with defined operating temperature and package constraints.
Request a quote or contact sales to discuss availability, pricing, and lead time for the MT29F64G08CBABAWP-M:B.
