MT29F64G08CBABAWP-M:B TR

The MT29F64G08CBABAWP-M:B TR is a 64 Gbit non-volatile NAND flash memory device implemented as an 8G × 8 organization with a parallel interface. It provides solid-state storage in a 48-TSOP I (48-TFSOP) package and operates from a 2.7 V to 3.6 V supply.

This device is intended for designs that require parallel NAND flash memory capacity in a compact TSOP footprint, and is supplied by Micron Technology Inc.

Key Features

• Memory Type and Technology Non-volatile FLASH (NAND) memory, organized as 8G × 8 for a total memory size of 64 Gbit.
• Interface Parallel memory interface for legacy and parallel-access designs requiring byte-wide NAND connectivity.
• Voltage Supply Operates from 2.7 V to 3.6 V, enabling compatibility with common 3.3 V system rails.
• Package Available in a 48-TFSOP / 48-TSOP I package (0.724" / 18.40 mm width), suitable for PCB designs that accept TSOP I footprints.
• Operating Temperature Commercial temperature range: 0°C to 70°C (TA), appropriate for standard ambient application environments.
• Mounting and Format Surface-mount device in a standardized TSOP form factor for automated assembly and compact board placement.

Typical Applications

• Embedded Storage — Provides 64 Gbit of parallel NAND flash for embedded systems requiring non-volatile program or data storage.
• Firmware and Code Storage — Suitable for storing firmware images and code in designs that use a parallel NAND interface.
• Mass Storage for Legacy Interfaces — Fits applications that use parallel flash architectures and need a TSOP package.

Unique Advantages

• High Density — 64 Gbit memory size supports substantial on-board non-volatile storage without external expansion.
• Parallel Interface Flexibility — Parallel NAND interface supports designs that rely on byte-wide access and legacy memory controllers.
• Wide Supply Range — 2.7 V to 3.6 V operation aligns with common 3.3 V system supplies for straightforward integration.
• Compact TSOP I Package — 48-TSOP I package (18.40 mm width) simplifies placement in space-constrained PCB layouts.
• Commercial Temperature Support — Rated for 0°C to 70°C operation for general-purpose electronics environments.
• Micron Manufacturing — Manufactured by Micron Technology Inc., providing traceability to a well-known memory supplier.

Why Choose IC FLASH 64GBIT PAR 48TSOP I?

The MT29F64G08CBABAWP-M:B TR positions itself as a high-density parallel NAND flash option for designs that require 64 Gbit of non-volatile storage in a 48-TSOP I package. With a 2.7 V–3.6 V supply range and commercial temperature rating, it fits a broad set of standard ambient applications that use parallel flash memory.

This device is suited to engineers and procurement teams looking for Micron-manufactured NAND flash in a compact TSOP form factor for embedded storage, firmware retention, or legacy parallel memory architectures, offering straightforward integration and established manufacturing provenance.

Request a quote or submit a pricing and availability inquiry to receive lead-time and ordering information for the MT29F64G08CBABAWP-M:B TR.