MT29F64G08CBABBWP-12:B

The MT29F64G08CBABBWP-12:B is a 64 Gbit non-volatile FLASH NAND memory device from Micron Technology Inc., organized as 8G × 8. It is supplied in a 48-TSOP I package and implements a parallel memory interface for integration into systems requiring high-density on-board storage.

Designed for applications operating from 0°C to 70°C, the device runs from a 2.7 V to 3.6 V supply and supports a clock frequency of up to 83 MHz, making it suitable for a range of commercial electronic products that need reliable, high-capacity FLASH storage.

Key Features

• Memory Type & Density 64 Gbit non-volatile FLASH (NAND) memory organized as 8G × 8 for high-capacity on-board storage.
• Interface & Timing Parallel memory interface with a specified clock frequency of 83 MHz to match parallel system timing requirements.
• Voltage Supply Operates from 2.7 V to 3.6 V, compatible with common 3.3 V system rails.
• Operating Temperature Rated for an ambient temperature range of 0°C to 70°C (TA), suitable for commercial-temperature applications.
• Package Available in a 48‑TSOP I (48‑TFSOP, 0.724" / 18.40 mm width) package for compact PCB integration.
• Memory Format FLASH memory format (NAND), providing persistent storage for firmware, data tables, and large data blocks.

Typical Applications

• Embedded Systems — On-board non-volatile storage for firmware and application data in embedded controllers and modules that use parallel memory interfaces.
• Consumer Electronics — High-capacity FLASH for devices requiring local data or media storage within a compact TSOP package.
• Data Storage Modules — Integration into storage modules and expansion boards where 64 Gbit density and parallel interface are required.
• Commercial Equipment — Non-volatile memory for commercial devices operating within a 0°C to 70°C ambient range and standard 3.3 V systems.

Unique Advantages

• High-density single-chip storage: 64 Gbit capacity reduces the need for multiple devices or external storage expansion.
• Parallel interface support: Enables integration with designs that use parallel memory buses and timing up to 83 MHz.
• Standard supply voltage range: 2.7 V–3.6 V compatibility simplifies power design with common 3.3 V rails.
• Compact TSOP I package: 48-TSOP I (18.40 mm width) provides a small PCB footprint for space-constrained designs.
• Commercial temperature rating: Specified 0°C to 70°C operation for reliable performance in commercial environments.

Why Choose IC FLASH 64GBIT PAR 48TSOP I?

The MT29F64G08CBABBWP-12:B offers a straightforward, high-capacity NAND FLASH solution in a compact 48-TSOP I package, with a parallel interface and an 83 MHz clock specification for systems that require dense, non-volatile memory. Its 2.7 V–3.6 V supply range and 0°C–70°C operating window make it well-suited to commercial electronic designs that need reliable on-board storage.

This device is appropriate for engineers and procurement teams seeking a single-chip 64 Gbit FLASH option from Micron Technology Inc. that balances storage density, package size, and standard system voltage compatibility for long-term integration into commercial product lines.

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