MT29F64G08CBABAWP:B TR
| Part Description |
IC FLASH 64GBIT PAR 48TSOP I |
|---|---|
| Quantity | 280 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 48-TSOP I | Memory Format | FLASH | Technology | FLASH - NAND | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 64 Gbit | Access Time | N/A | Grade | Commercial | ||
| Clock Frequency | N/A | Voltage | 2.7V ~ 3.6V | Memory Type | Non-Volatile | ||
| Operating Temperature | 0°C ~ 70°C (TA) | Write Cycle Time Word Page | N/A | Packaging | 48-TFSOP (0.724", 18.40mm Width) | ||
| Mounting Method | Non-Volatile | Memory Interface | Parallel | Memory Organization | 8G x 8 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS3 Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | 3A991B1A | HTS Code | 8542.32.0071 |
Overview of MT29F64G08CBABAWP:B TR – IC FLASH 64GBIT PAR 48TSOP I
The MT29F64G08CBABAWP:B TR is a 64 Gbit Non-Volatile FLASH - NAND memory device from Micron Technology Inc., organized as 8G × 8. It provides parallel-interface flash storage in a compact 48-TSOP I package.
Key device attributes include a 2.7 V to 3.6 V supply range and an operating ambient temperature of 0°C to 70°C, making it suitable for systems requiring parallel NAND flash memory in a TSOP-48 footprint.
Key Features
- Memory 64 Gbit capacity implemented as 8G × 8 organization; non-volatile NAND flash technology for persistent data storage.
- Interface Parallel memory interface suitable for parallel bus architectures and direct integration with compatible controllers.
- Voltage Supply voltage range of 2.7 V to 3.6 V, supporting commonly used system power rails within that range.
- Package 48-TSOP I / 48-TFSOP package (0.724", 18.40 mm width) providing a standard surface-mount footprint for board-level mounting.
- Operating Temperature Ambient operating range of 0°C to 70°C (TA), for designs within commercial temperature limits.
- Memory Format & Mounting FLASH memory format supplied as a surface-mount 48-TSOP I device.
Typical Applications
- Embedded Systems — Non-volatile program and data storage in embedded designs that use parallel flash memory.
- Consumer Electronics — Firmware and large-capacity data storage where a parallel NAND flash interface and TSOP-48 footprint are suitable.
- Industrial Control — Persistent code and data storage in control hardware operating within the specified 0°C to 70°C range.
Unique Advantages
- High-density storage: 64 Gbit capacity enables substantial local non-volatile storage in a single device, reducing the need for multiple memory components.
- Parallel interface simplicity: Parallel memory interface supports straightforward integration into existing parallel-memory architectures.
- Standard package footprint: 48-TSOP I (48-TFSOP) package conforms to common surface-mount mounting practices for compact board layouts.
- Flexible supply range: 2.7 V to 3.6 V operation accommodates common 3.3 V system rails and related power architectures.
- Persistent NAND technology: FLASH - NAND provides non-volatile data retention for firmware and data storage needs.
Why Choose MT29F64G08CBABAWP:B TR?
The MT29F64G08CBABAWP:B TR is positioned for designs that require high-density parallel NAND flash memory in a compact TSOP-48 package, with a supply range and operating temperature suitable for commercial applications. Its 8G × 8 organization and 64 Gbit capacity provide a single-device solution for significant on-board non-volatile storage.
Designed and supplied by Micron Technology Inc., this device is appropriate for engineers and procurement teams specifying parallel FLASH memory for embedded, consumer, or industrial control products where the stated voltage and temperature ranges align with system requirements.
Request a quote or submit an inquiry to check availability, lead times, and pricing for MT29F64G08CBABAWP:B TR.
