MT29F64G08CBABBWP-12IT:B

The MT29F64G08CBABBWP-12IT:B is a 64 Gbit NAND flash memory device in a parallel memory format. It implements FLASH NAND technology with an 8G × 8 memory organization for high-density non-volatile storage.

Packaged in a 48-TSOP I format and operating from 2.7 V to 3.6 V with a specified clock frequency of 83 MHz, this device is suited for designs that require a parallel flash solution with a wide operating temperature range of −40°C to 85°C.

Key Features

• Memory Type & Technology Non-volatile FLASH NAND memory providing persistent data storage without power.
• Capacity & Organization 64 Gbit total capacity organized as 8G × 8, enabling large data and code storage in a single device.
• Interface & Performance Parallel memory interface with a clock frequency of 83 MHz for system-level integration where parallel flash access is required.
• Voltage Supply voltage range of 2.7 V to 3.6 V for compatibility with common system power rails.
• Package & Mounting 48-TFSOP / 48-TSOP I package (0.724" / 18.40 mm width) for surface-mount board designs.
• Operating Temperature Rated for −40°C to 85°C (TA), suitable for temperature-variable environments.
• Manufacturer Manufactured by Micron Technology Inc.

Typical Applications

• Embedded Storage High-density parallel flash for firmware, boot code, and large data storage in embedded systems.
• Industrial Equipment Use in industrial controllers and instrumentation where the −40°C to 85°C operating range is required.
• Consumer Electronics Provides non-volatile storage in devices that use parallel NAND interfaces and require 64 Gbit capacity.
• Data Logging & Recording Persistent storage for systems that collect and store large amounts of data in a single-package solution.

Unique Advantages

• High-density 64 Gbit capacity: Enables consolidation of large firmware and data storage into one component, simplifying board layout.
• 8G × 8 organization: Standard memory organization that facilitates straightforward integration with parallel memory controllers.
• Parallel interface at 83 MHz: Supports system designs that require parallel flash access with a defined clock rate for timing considerations.
• Wide supply voltage range: 2.7 V to 3.6 V compatibility helps with systems using common 3.3 V rails and tolerant power domains.
• 48-TSOP I package: Compact surface-mount package (18.40 mm width) suitable for dense board designs.
• Extended operating temperature: Rated −40°C to 85°C for deployment in temperature-variable environments.

Why Choose IC FLASH 64GBIT PAR 48TSOP I?

The MT29F64G08CBABBWP-12IT:B positions itself as a high-density parallel NAND flash option for designs that require 64 Gbit of non-volatile storage in a 48-TSOP I package. Its 8G × 8 organization, 83 MHz clocking, and 2.7 V–3.6 V supply range make it suitable for systems using parallel flash interfaces and common power rails.

Manufactured by Micron Technology Inc., this device is appropriate for engineers and procurement teams seeking a robust storage component for embedded, industrial, and consumer applications where package footprint, operating temperature, and interface type are key selection criteria.

Request a quote or contact sales to discuss availability, pricing, and how this 64 Gbit parallel NAND flash fits your project requirements.