MT29F64G08CBABBWPR:B TR
| Part Description |
IC FLASH 64GBIT PAR 48TSOP I |
|---|---|
| Quantity | 419 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 48-TSOP I | Memory Format | FLASH | Technology | FLASH - NAND | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 64 Gbit | Access Time | N/A | Grade | Commercial | ||
| Clock Frequency | N/A | Voltage | 2.7V ~ 3.6V | Memory Type | Non-Volatile | ||
| Operating Temperature | 0°C ~ 70°C (TA) | Write Cycle Time Word Page | N/A | Packaging | 48-TFSOP (0.724", 18.40mm Width) | ||
| Mounting Method | Non-Volatile | Memory Interface | Parallel | Memory Organization | 8G x 8 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS3 Compliant | REACH Compliance | REACH Unknown | ||
| Qualification | N/A | ECCN | 3A991B1A | HTS Code | 8542.32.0071 |
Overview of MT29F64G08CBABBWPR:B TR – IC FLASH 64GBIT PAR 48TSOP I
The MT29F64G08CBABBWPR:B TR from Micron Technology Inc. is a 64 Gbit non-volatile NAND flash memory device with a parallel interface. It is organized as 8G × 8 and operates from a 2.7 V to 3.6 V supply with an ambient operating temperature range of 0°C to 70°C.
This device is packaged in a 48-TSOP I (48-TFSOP, 0.724", 18.40 mm width) footprint for space-efficient mounting in electronic designs that require high-density parallel flash memory.
Key Features
- Memory Type Non-volatile NAND flash memory suitable for persistent data and code storage.
- Capacity & Organization 64 Gbit total capacity, organized as 8G × 8 for byte-wide parallel data handling.
- Interface Parallel memory interface for direct byte-wide connections to host controllers.
- Power Supplies operate from 2.7 V to 3.6 V to support common system voltage rails.
- Package 48-TSOP I (48-TFSOP, 0.724", 18.40 mm width) package for standardized PCB mounting and footprint compatibility.
- Operating Temperature Specified ambient operating range of 0°C to 70°C (TA).
- Manufacturer Produced by Micron Technology Inc., identified by the part number MT29F64G08CBABBWPR:B TR.
Typical Applications
- Embedded firmware and code storage Use the 64 Gbit NAND flash to store firmware, boot code, and system software in embedded designs requiring non-volatile memory.
- Mass data storage in electronic modules Provides high-density non-volatile storage for data buffering and file storage where a parallel interface is preferred.
- System boot/media storage Suitable for applications that require persistent boot media or large on-board storage in a compact TSOP package.
Unique Advantages
- High-density storage: 64 Gbit capacity enables large amounts of non-volatile data storage in a single device.
- Byte-wide organization: 8G × 8 organization supports straightforward byte-oriented data transfers over a parallel interface.
- Standard power range: 2.7 V to 3.6 V supply range aligns with common system voltages for easy integration.
- Compact TSOP footprint: 48-TSOP I (48-TFSOP, 18.40 mm width) package offers a standardized form factor for PCB layout and assembly.
- Commercial temperature rating: Specified for 0°C to 70°C ambient operation where commercial-temperature devices are appropriate.
Why Choose MT29F64G08CBABBWPR:B TR?
The MT29F64G08CBABBWPR:B TR positions itself as a high-density, parallel-interface NAND flash option for designs that require 64 Gbit of non-volatile storage in a standardized 48-TSOP I package. Its 8G × 8 organization and 2.7 V–3.6 V supply compatibility make it suitable for systems that favor byte-wide parallel memory access and common power rails.
Manufactured by Micron Technology Inc., this device is appropriate for engineers specifying commercial-temperature NAND flash for embedded firmware, boot media, and on-board mass storage applications where the documented electrical, capacity, and package characteristics match system requirements.
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