MT29F64G08CBCABH1-12ITZ:A
| Part Description |
IC FLASH 64GBIT PARALLEL 100VBGA |
|---|---|
| Quantity | 1,146 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 100-VBGA (12x18) | Memory Format | FLASH | Technology | FLASH - NAND | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 64 Gbit | Access Time | N/A | Grade | Commercial | ||
| Clock Frequency | 83 MHz | Voltage | 2.7V ~ 3.6V | Memory Type | Non-Volatile | ||
| Operating Temperature | 0°C ~ 70°C (TA) | Write Cycle Time Word Page | N/A | Packaging | 100-VBGA | ||
| Mounting Method | Non-Volatile | Memory Interface | Parallel | Memory Organization | 8G x 8 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | 3A991B1A | HTS Code | 8542.32.0071 |
Overview of MT29F64G08CBCABH1-12ITZ:A – IC FLASH 64GBIT PARALLEL 100VBGA
The MT29F64G08CBCABH1-12ITZ:A is a 64 Gbit non-volatile FLASH NAND memory device organized as 8G × 8 with a parallel memory interface. It is supplied in a 100-VBGA (12 × 18) package and operates from a 2.7 V to 3.6 V supply rail with an 83 MHz clock frequency.
This device is intended for designs that require parallel NAND flash storage in a compact BGA package, operating across a 0°C to 70°C ambient temperature range.
Key Features
- Memory Type Non-volatile FLASH NAND memory providing persistent storage without power.
- Density & Organization 64 Gbit capacity organized as 8G × 8 to match parallel data bus configurations.
- Interface & Performance Parallel memory interface with an 83 MHz clock frequency for timed parallel access.
- Power Supply Single supply operation across 2.7 V to 3.6 V.
- Package 100-VBGA package (12 × 18) for compact board-level integration.
- Operating Temperature Specified for 0°C to 70°C (TA).
Typical Applications
- Embedded storage systems Parallel NAND FLASH for systems requiring 64 Gbit non-volatile storage within the 2.7 V–3.6 V supply range.
- Board-level memory expansion Use where a 100-VBGA package and parallel interface fit board stack-up and routing constraints.
- Industrial and commercial devices Designs operating within 0°C–70°C that need persistent storage with an 8G × 8 memory organization.
Unique Advantages
- High-capacity NAND storage: 64 Gbit density provides substantial non-volatile storage in a single device.
- Parallel interface simplicity: 8-bit parallel organization (8G × 8) supports parallel bus architectures and straightforward timing using the device’s 83 MHz clock specification.
- Wide supply compatibility: Operates across a 2.7 V to 3.6 V range to fit common system power rails.
- Compact BGA footprint: 100-VBGA (12 × 18) package enables space-efficient placement on PCBs.
- Specified ambient range: Rated for 0°C to 70°C operation for standard-temperature commercial applications.
Why Choose MT29F64G08CBCABH1-12ITZ:A?
This FLASH NAND device combines a large 64 Gbit capacity, parallel 8-bit organization, and a compact 100-VBGA package to address designs that require high-density non-volatile storage with straightforward parallel interfacing. Its 2.7 V–3.6 V supply compatibility and 0°C–70°C operating range make it suitable for standard commercial applications where board-level space and power constraints are considerations.
Engineers and procurement teams looking for a verified parallel FLASH memory option will find this device aligns with systems that require predictable supply and temperature parameters, a defined clock rate, and a compact BGA footprint for integration.
Request a quote or submit a parts inquiry to check availability and pricing for the MT29F64G08CBCABH1-12ITZ:A and to discuss volume, lead times, or delivery options.
