MT29F64G08CBCABH1-12ITZ:A TR
| Part Description |
IC FLASH 64GBIT PARALLEL 100VBGA |
|---|---|
| Quantity | 384 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 100-VBGA (12x18) | Memory Format | FLASH | Technology | FLASH - NAND | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 64 Gbit | Access Time | N/A | Grade | Commercial | ||
| Clock Frequency | 83 MHz | Voltage | 2.7V ~ 3.6V | Memory Type | Non-Volatile | ||
| Operating Temperature | 0°C ~ 70°C (TA) | Write Cycle Time Word Page | N/A | Packaging | 100-VBGA | ||
| Mounting Method | Non-Volatile | Memory Interface | Parallel | Memory Organization | 8G x 8 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS3 Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | 3A991B1A | HTS Code | 8542.32.0071 |
Overview of MT29F64G08CBCABH1-12ITZ:A TR – IC FLASH 64GBIT PARALLEL 100VBGA
The MT29F64G08CBCABH1-12ITZ:A TR is a 64 Gbit non-volatile NAND flash memory device organized as 8G × 8 with a parallel memory interface. It is a parallel FLASH‑NAND component supplied in a 100‑VBGA (12×18) package and operates from a 2.7 V to 3.6 V supply.
Designed for systems that require parallel NAND flash storage, this device provides high-density, non-volatile memory in a compact VBGA package with defined operating temperature and clock parameters for integration into embedded designs.
Key Features
- Memory Type — Non‑Volatile NAND FLASH Uses FLASH - NAND technology to provide non-volatile storage in a parallel memory format.
- Density & Organization 64 Gbit total capacity organized as 8G × 8, enabling high-density storage in a single device.
- Interface & Performance Parallel memory interface with a specified clock frequency of 83 MHz for synchronized data access.
- Power Operates from a 2.7 V to 3.6 V supply range to match common system power rails.
- Package Supplied in a 100‑VBGA package (12×18 mm) for compact board-level integration.
- Operating Range Specified ambient operating temperature of 0°C to 70°C (TA).
Typical Applications
- Embedded Storage Systems Provides high-density non-volatile storage for embedded platforms that use parallel NAND flash.
- Firmware and Code Storage Stores firmware, boot code, or system images where a parallel FLASH memory interface is required.
- Data Logging and Retention Suits applications that require persistent data retention within the specified voltage and temperature ranges.
Unique Advantages
- High Density 64 Gbit Capacity: Consolidates storage needs into a single device with 8G × 8 organization.
- Parallel Interface Simplicity: Parallel memory interface can simplify integration with controllers designed for parallel NAND.
- Defined Clock Support: Supports operation at a clock frequency of 83 MHz for predictable timing behavior.
- Flexible Supply Range: 2.7 V to 3.6 V operation aligns with common system power rails.
- Compact VBGA Packaging: 100‑VBGA (12×18 mm) package reduces board footprint while providing a standardized mounting form.
Why Choose IC FLASH 64GBIT PARALLEL 100VBGA?
The IC FLASH 64GBIT PARALLEL 100VBGA (MT29F64G08CBCABH1-12ITZ:A TR) delivers a high-density, parallel NAND flash solution packaged in a compact 100‑VBGA footprint. Its 64 Gbit capacity, 8G × 8 organization, and defined electrical and thermal parameters make it suitable for designs that require predictable non-volatile storage behavior.
This device is well suited for engineers and procurement teams specifying parallel FLASH memory where a balance of density, package compactness, and standard voltage operation are primary considerations, supporting scalable board-level designs within the listed operating conditions.
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