MT29F64G08CBCABH1-10Z:A TR
| Part Description |
IC FLASH 64GBIT PARALLEL 100VBGA |
|---|---|
| Quantity | 356 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 100-VBGA (12x18) | Memory Format | FLASH | Technology | FLASH - NAND | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 64 Gbit | Access Time | N/A | Grade | Commercial | ||
| Clock Frequency | 100 MHz | Voltage | 2.7V ~ 3.6V | Memory Type | Non-Volatile | ||
| Operating Temperature | 0°C ~ 70°C (TA) | Write Cycle Time Word Page | N/A | Packaging | 100-VBGA | ||
| Mounting Method | Non-Volatile | Memory Interface | Parallel | Memory Organization | 8G x 8 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | 3A991B1A | HTS Code | 8542.32.0071 |
Overview of MT29F64G08CBCABH1-10Z:A TR – IC FLASH 64GBIT PARALLEL 100VBGA
The MT29F64G08CBCABH1-10Z:A TR is a 64 Gbit non-volatile NAND flash memory device in a parallel interface configuration. It implements FLASH - NAND technology with an 8G × 8 memory organization and is supplied in a 100-VBGA (12×18) package.
Designed for systems that require high-density parallel flash storage, this device delivers a 100 MHz clock interface and operates from a 2.7 V to 3.6 V supply within a 0 °C to 70 °C ambient temperature range.
Key Features
- Memory Core 64 Gbit capacity organized as 8G × 8 using FLASH - NAND technology for non-volatile storage.
- Interface & Timing Parallel memory interface with a 100 MHz clock frequency for synchronous parallel access.
- Power Operates from a 2.7 V to 3.6 V supply range to support common system power rails.
- Package Supplied in a 100-VBGA (12×18) package, providing a compact footprint for board-level integration.
- Operating Temperature Rated for operation from 0 °C to 70 °C (TA) for commercial-temperature applications.
- Memory Format FLASH memory format suitable for non-volatile data and code storage.
Typical Applications
- Embedded Storage Provides non-volatile storage for embedded systems that require parallel FLASH memory.
- Firmware and Code Storage Stores firmware or boot code where a parallel NAND FLASH memory organization is required.
- Data Logging Offers high-density non-volatile capacity for systems that retain logged data across power cycles.
Unique Advantages
- High Density 64 Gbit Capacity: Large storage capacity in a single device reduces the need for multiple components.
- Parallel Interface Compatibility: Parallel memory interface supports designs that require parallel FLASH access and timing.
- Compact 100-VBGA Package: 100-VBGA (12×18) packaging minimizes PCB area while maintaining a high pin count.
- Flexible Power Range: 2.7 V to 3.6 V supply range accommodates common system voltage rails.
- Commercial Temperature Rating: 0 °C to 70 °C operation supports a wide range of commercial-device deployments.
- Established NAND FLASH Technology: FLASH - NAND memory format provides non-volatile storage suited to data and code retention.
Why Choose MT29F64G08CBCABH1-10Z:A TR?
The MT29F64G08CBCABH1-10Z:A TR positions itself as a high-density, parallel NAND flash solution packaged in a compact 100-VBGA footprint. Its combination of 64 Gbit capacity, 8G × 8 organization, and 100 MHz clock frequency makes it suitable for designs that require substantial non-volatile storage with parallel access.
With a 2.7 V to 3.6 V supply range and commercial temperature rating, this device is appropriate for a variety of board-level memory applications where FLASH - NAND technology and a parallel interface are required. It is manufactured by Micron Technology Inc.
Request a quote or contact sales to discuss availability, pricing, and ordering for the MT29F64G08CBCABH1-10Z:A TR.
