MT29F64G08CBABBWPR:B
| Part Description |
IC FLASH 64GBIT PAR 48TSOP I |
|---|---|
| Quantity | 512 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 48-TSOP I | Memory Format | FLASH | Technology | FLASH - NAND | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 64 Gbit | Access Time | N/A | Grade | Commercial | ||
| Clock Frequency | N/A | Voltage | 2.7V ~ 3.6V | Memory Type | Non-Volatile | ||
| Operating Temperature | 0°C ~ 70°C (TA) | Write Cycle Time Word Page | N/A | Packaging | 48-TFSOP (0.724", 18.40mm Width) | ||
| Mounting Method | Non-Volatile | Memory Interface | Parallel | Memory Organization | 8G x 8 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS Compliant | REACH Compliance | REACH Unknown | ||
| Qualification | N/A | ECCN | 3A991B1A | HTS Code | 8542.32.0071 |
Overview of MT29F64G08CBABBWPR:B – 64 Gbit Parallel NAND Flash, 48‑TSOP I
The MT29F64G08CBABBWPR:B is a 64 Gbit non-volatile memory device implemented as NAND flash with a parallel interface. Packaged in a 48‑TSOP I (48‑TFSOP, 18.40 mm width) footprint and specified for commercial temperature operation, it is intended for systems that require dense, parallel-access flash storage.
Key characteristics include an 8G × 8 memory organization and a 2.7 V to 3.6 V supply range, making the device suitable for designs that integrate parallel NAND flash with standard 3.3 V-compatible power domains.
Key Features
- Memory Type Non-volatile NAND flash storage provides persistent data retention without power.
- Technology & Organization FLASH - NAND technology arranged as 8G × 8, delivering a total memory size of 64 Gbit.
- Interface Parallel memory interface for systems designed around parallel flash connectivity.
- Supply Voltage Operates from 2.7 V to 3.6 V, compatible with common 3.3 V system power rails.
- Package 48‑TFSOP / 48‑TSOP I package (0.724", 18.40 mm width) for board-level mounting where TSOP I footprints are required.
- Operating Temperature Specified for commercial ambient operation from 0°C to 70°C.
Typical Applications
- Embedded storage systems Used where parallel NAND flash is required for persistent program or data storage in embedded designs.
- Commercial electronic products Suitable for devices and systems operating within the 0°C to 70°C range that need 64 Gbit parallel flash memory.
- Board-level replacements and upgrades Fits designs that specify a 48‑TSOP I package and parallel flash interface for straightforward integration.
Unique Advantages
- High storage density: 64 Gbit capacity enables greater data or code storage within a single device footprint.
- Parallel interface compatibility: Supports designs that rely on parallel flash access methods without redesigning system interfaces.
- Standard supply range: 2.7 V to 3.6 V operation aligns with common 3.3 V power domains for simplified power design.
- TSOP I package: 48‑TFSOP / 48‑TSOP I package provides a known board footprint for migrations or replacements.
- Commercial temperature rating: Specified 0°C to 70°C operation for general-purpose commercial applications.
Why Choose IC FLASH 64GBIT PAR 48TSOP I?
The MT29F64G08CBABBWPR:B positions itself as a straightforward, high-density parallel NAND flash option in a 48‑TSOP I package from Micron Technology Inc. Its 64 Gbit capacity, 8G × 8 organization and 2.7 V–3.6 V supply range make it appropriate for commercial systems that require persistent storage with parallel access and a standard TSOP footprint.
This device is well suited to engineers and procurement teams specifying parallel NAND flash for board-level integration, replacements, or designs constrained to commercial temperature ranges. Backed by the Micron Technology Inc. brand, it offers a clear specification set for designs that prioritize capacity, parallel interface compatibility, and established package form factors.
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