MT29F64G08CBABBWP-12:B TR

The MT29F64G08CBABBWP-12:B TR is a 64 Gbit non-volatile NAND flash memory device in a parallel interface configuration. It implements NAND flash technology with an 8G x 8 memory organization and is designed for systems that require high-density parallel flash storage.

Supplied in a 48-TSOP I package with a commercial operating temperature range of 0°C–70°C and a supply voltage window of 2.7 V–3.6 V, this device addresses applications where compact package size and standard parallel flash connectivity are required.

Key Features

• Memory Type & Technology 64 Gbit non-volatile NAND flash organized as 8G × 8 for high-density storage in a single device.
• Interface Parallel memory interface enables direct connection to parallel memory controllers and legacy host interfaces.
• Clock Frequency Supports an 83 MHz clock frequency for timing reference in compatible system designs.
• Power Operates from a 2.7 V to 3.6 V supply range to match common 3 V system rails.
• Package Available in a 48-TSOP I (48-TFSOP, 0.724", 18.40 mm width) package for board-level density and standardized footprint.
• Operating Temperature Rated for commercial use with an ambient temperature range of 0°C to 70°C (TA).

Typical Applications

• Embedded Systems — Provides non-volatile code and data storage for commercial embedded designs that use parallel flash memory.
• Consumer Electronics — Serves as onboard storage for consumer devices requiring compact, high-density flash in a TSOP package.
• Firmware and Boot Storage — Stores firmware, boot loaders, and system code in applications utilizing parallel flash memory organization.
• Commercial Data Storage — Suitable for general-purpose data retention in commercial equipment operating within the specified temperature and voltage ranges.

Unique Advantages

• High Density 64 Gbit Capacity: Consolidates large storage requirements into a single device with an 8G × 8 memory organization.
• Parallel Interface Compatibility: Supports direct connection to parallel memory controllers and legacy host interfaces, simplifying integration into existing designs.
• Standard 48-TSOP I Package: Provides a common, compact footprint (0.724" / 18.40 mm width) for board-level space savings and assembly consistency.
• Wide Supply Voltage Range: Operates from 2.7 V to 3.6 V to align with typical 3 V system rails and simplify power-supply design.
• Commercial Temperature Rating: Rated for 0°C–70°C operation, matching typical commercial deployment environments.
• Clear Manufacturer Identification: Produced by Micron Technology Inc., providing traceability to a known memory vendor.

Why Choose MT29F64G08CBABBWP-12:B TR?

The MT29F64G08CBABBWP-12:B TR positions itself as a high-density parallel NAND flash memory option for commercial embedded and consumer designs that require 64 Gbit capacity in a standardized TSOP package. Its combination of 8G × 8 organization, 83 MHz clock reference, and 2.7 V–3.6 V supply compatibility makes it suitable for systems using parallel flash architectures.

This device is well suited to designers seeking a compact, single-chip flash solution with clear electrical and thermal operating parameters, and it is provided by Micron Technology Inc. for supply-chain traceability.

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