MT29F64G08CBABAWP:B

The MT29F64G08CBABAWP:B is a 64 Gbit non-volatile NAND flash memory device organized as 8G × 8 with a parallel memory interface. Packaged in a 48‑TSOP I (48‑TFSOP, 0.724" / 18.40 mm width) form factor, it is designed for systems that require high-density parallel flash storage.

With a nominal supply range of 2.7 V to 3.6 V and an operating ambient range of 0 °C to 70 °C, this device targets applications that need reliable, removable or board-mounted NAND flash memory within standard commercial temperature and supply envelopes.

Key Features

• Memory Core  Non-volatile FLASH - NAND technology providing 64 Gbit of storage capacity organized as 8G × 8 for parallel access.
• Interface  Parallel memory interface for direct connection to parallel memory controllers and host buses.
• Voltage Supply  Operates from 2.7 V to 3.6 V, compatible with standard 3.3 V system supplies.
• Package  Available in a 48‑TSOP I package (48‑TFSOP, 0.724" / 18.40 mm width), suitable for board-level mounting where a compact TSOP footprint is required.
• Operating Temperature  Specified for ambient operation from 0 °C to 70 °C (TA), appropriate for commercial-temperature applications.
• Memory Format & Organization  FLASH memory arranged as 8G × 8, providing byte-wide organization for straightforward data interfacing.

Typical Applications

• Embedded Storage  Use as on-board non-volatile storage in embedded systems that require parallel NAND flash capacity.
• Consumer Electronics  Integration into consumer devices that operate within the 0 °C to 70 °C range and use 3.3 V class supplies.
• Industrial Equipment (Commercial-Temp)  Applicable in industrial or instrumentation equipment where commercial temperature range and parallel flash are suitable.

Unique Advantages

• High-density storage: 64 Gbit capacity enables larger firmware, file systems, or data storage within a single flash device.
• Parallel interface simplicity: Byte-wide parallel organization (8G × 8) facilitates direct interfacing with parallel memory controllers and legacy host designs.
• Standard voltage compatibility: 2.7 V to 3.6 V supply range aligns with common 3.3 V system rails, easing power-supply integration.
• Compact TSOP package: 48‑TSOP I (0.724", 18.40 mm width) delivers a board-mounted form factor that balances density and manufacturability.
• Commercial temperature suitability: Rated 0 °C to 70 °C for designs that operate within standard commercial ambient conditions.
• Manufacturer backing: Produced by Micron Technology Inc., providing a known supplier for procurement and lifecycle considerations.

Why Choose IC FLASH 64GBIT PAR 48TSOP I?

The MT29F64G08CBABAWP:B positions itself as a high-density, parallel NAND flash memory option in a compact 48‑TSOP I package for designs that require reliable non-volatile storage within commercial temperature and standard 3.3 V supply environments. Its 8G × 8 organization and parallel interface make it suitable for systems that need straightforward byte-wide access and compatibility with existing parallel memory architectures.

This device is appropriate for engineers and buyers specifying flash memory for embedded systems, consumer electronics, and other commercial-temperature applications where capacity, package footprint, and supply compatibility are primary selection criteria. Sourcing from Micron Technology Inc. provides a clear manufacturer reference for integration and procurement planning.

Request a quote or contact sales to discuss availability, pricing, and integration support for MT29F64G08CBABAWP:B IC FLASH 64GBIT PAR 48TSOP I.