MT29F64G08CBABAWP-IT:B

IC FLASH 64GBIT PAR 48TSOP I
Part Description

IC FLASH 64GBIT PAR 48TSOP I

Quantity 31 Available (as of May 4, 2026)
Product CategoryMemory
ManufacturerMicron Technology Inc.
Manufacturing StatusObsolete
Manufacturer Standard Lead TimeRFQ
Datasheet

Specifications & Environmental

Device Package48-TSOP IMemory FormatFLASHTechnologyFLASH - NAND
Memory Size64 GbitAccess TimeN/AGradeIndustrial
Clock FrequencyN/AVoltage2.7V ~ 3.6VMemory TypeNon-Volatile
Operating Temperature-40°C ~ 85°C (TA)Write Cycle Time Word PageN/APackaging48-TFSOP (0.724", 18.40mm Width)
Mounting MethodNon-VolatileMemory InterfaceParallelMemory Organization8G x 8
Moisture Sensitivity Level3 (168 Hours)RoHS ComplianceROHS3 CompliantREACH ComplianceREACH Unaffected
QualificationN/AECCN3A991B1AHTS Code8542.32.0071

Overview of MT29F64G08CBABAWP-IT:B – IC FLASH 64Gbit Parallel, 48‑TSOP I

The MT29F64G08CBABAWP-IT:B is a 64 Gbit non-volatile NAND flash memory device manufactured by Micron Technology Inc. It features a parallel memory interface and an 8G x 8 memory organization for dense data storage.

Designed for systems that require high-density parallel flash in a compact board-level package, the device supports a 2.7 V to 3.6 V supply range and an operating temperature range of -40°C to 85°C, enabling integration into designs with extended temperature needs.

Key Features

  • Memory Type & Technology  Non-volatile NAND flash memory providing persistent data storage.
  • Capacity & Organization  64 Gbit total capacity with an 8G × 8 memory organization.
  • Interface  Parallel memory interface for board-level parallel data access.
  • Voltage Supply  Operates from 2.7 V to 3.6 V to accommodate common system power rails.
  • Operating Temperature  Industrial temperature range from -40°C to 85°C (TA).
  • Package  48‑TSOP I (48‑TFSOP, 0.724" / 18.40 mm width) standard package for PCB mounting.

Typical Applications

  • Industrial Control Systems  Use where extended temperature operation (-40°C to 85°C) and non-volatile parallel storage are required.
  • Legacy Parallel-Interface Designs  Drop-in replacement or design implementation for systems that use a parallel NAND flash interface.
  • Board-Level Storage Solutions  High-density 64 Gbit capacity in a 48‑TSOP I footprint for compact board-level implementations.
  • Embedded Systems Requiring Non‑Volatile Memory  Provides persistent data storage with a standard supply voltage range suitable for many embedded power architectures.

Unique Advantages

  • High-density 64 Gbit Capacity: Enables large data storage in a single device, reducing board space compared to multiple smaller parts.
  • Parallel Interface Compatibility: Supports parallel memory access for designs that require traditional parallel NAND connections.
  • Extended Temperature Range: Rated for -40°C to 85°C operation to support applications in varied thermal environments.
  • Standard 48‑TSOP I Package: Industry-standard 48‑TFSOP footprint (0.724", 18.40 mm width) for straightforward PCB integration.
  • Flexible Power Range: 2.7 V to 3.6 V supply compatibility eases integration with common system rails.
  • Manufactured by Micron Technology Inc.: Backed by a recognized flash memory manufacturer for consistent device sourcing.

Why Choose MT29F64G08CBABAWP-IT:B?

The MT29F64G08CBABAWP-IT:B positions itself as a compact, high-density parallel NAND flash option suitable for systems needing persistent storage with industrial temperature capability. Its 64 Gbit capacity, 8G × 8 organization, and parallel interface make it appropriate for board-level implementations that require substantial non-volatile memory in a 48‑TSOP I package.

Engineers designing for extended-temperature environments or maintaining legacy parallel flash architectures will find this device aligns with common power rails (2.7 V–3.6 V) and standard PCB footprints, supporting straightforward integration and long-term deployment.

Request a quote or contact sales to discuss availability, lead times, and pricing for the MT29F64G08CBABAWP-IT:B.

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