MT29F64G08CBABAL84A3WC1-M

The MT29F64G08CBABAL84A3WC1-M is a 64 Gbit non-volatile NAND flash memory provided as a die. It is organized as 8G × 8 and uses a parallel memory interface, targeting designs that require die-level NAND flash capacity and integration.

Key device characteristics include NAND flash technology, a 2.7 V to 3.6 V supply range, and an ambient operating temperature range of 0°C to 70°C, making it suitable for standard commercial embedded storage applications.

Key Features

• Memory Core (FLASH - NAND) Non-volatile NAND flash memory technology offering persistent data retention without power.
• Density & Organization 64 Gbit total capacity with an organization of 8G × 8 for byte-wide data handling.
• Interface Parallel memory interface provided at die level for integration into custom package or board-level designs.
• Power Operates from a 2.7 V to 3.6 V supply range, compatible with common 3 V system voltages.
• Package Supplied as a die (Supplier Device Package: Die) for direct die integration or multi-die assemblies.
• Temperature Range Rated for ambient operation from 0°C to 70°C (TA).

Typical Applications

• Embedded Storage Provides non-volatile storage for code and data in embedded systems requiring NAND flash capacity.
• Die-Level Integration Die form factor enables integration into custom packages, multi-die modules, or OEM-specific assemblies.
• Firmware and Data Retention 64 Gbit density supports storage of firmware images, large datasets, or system-level non-volatile requirements.

Unique Advantages

• High Density — 64 Gbit: Offers significant storage capacity in a single die to consolidate non-volatile memory needs.
• Byte-Organized Memory (8G × 8): Organization supports byte-wide data access and straightforward integration with parallel memory controllers.
• Parallel Interface: Enables direct parallel memory bus integration for systems designed around parallel flash architectures.
• Wide Supply Range: 2.7 V to 3.6 V operation aligns with common 3 V system rails for flexible power design.
• Die Form Factor: Delivered as a die for OEMs and integrators needing custom packaging or multi-die assemblies.
• Commercial Temperature Range: Specified for 0°C to 70°C ambient operation appropriate for standard commercial environments.

Why Choose MT29F64G08CBABAL84A3WC1-M?

The MT29F64G08CBABAL84A3WC1-M positions itself as a straightforward, high-density NAND flash die option for designs that require non-volatile storage at the die level. Its 64 Gbit capacity, 8G × 8 organization, and parallel interface make it suitable for integration into custom packages or systems where die-level memory is preferred.

Engineers and procurement teams seeking a die-form NAND solution with a common 2.7 V–3.6 V supply and a commercial operating temperature range will find this product appropriate for embedded storage and firmware retention use cases where die integration and density are primary considerations.

Request a quote or contact sales for pricing, availability, and integration support for the MT29F64G08CBABAL84A3WC1-M.