MT29F64G08CBABAWP-IT:B TR
| Part Description |
IC FLASH 64GBIT PAR 48TSOP I |
|---|---|
| Quantity | 40 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 48-TSOP I | Memory Format | FLASH | Technology | FLASH - NAND | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 64 Gbit | Access Time | N/A | Grade | Industrial | ||
| Clock Frequency | N/A | Voltage | 2.7V ~ 3.6V | Memory Type | Non-Volatile | ||
| Operating Temperature | -40°C ~ 85°C (TA) | Write Cycle Time Word Page | N/A | Packaging | 48-TFSOP (0.724", 18.40mm Width) | ||
| Mounting Method | Non-Volatile | Memory Interface | Parallel | Memory Organization | 8G x 8 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | 3A991B1A | HTS Code | 8542.32.0071 |
Overview of MT29F64G08CBABAWP-IT:B TR – IC FLASH 64GBIT PAR 48TSOP I
The MT29F64G08CBABAWP-IT:B TR is a 64 Gbit non-volatile FLASH NAND memory device organized as 8G x 8 with a parallel memory interface. It is supplied in a 48-TSOP I (48-TFSOP, 0.724" / 18.40mm width) package and supports a supply voltage range of 2.7 V to 3.6 V.
This device is specified to operate across a temperature range of -40°C to 85°C, providing a compact, high-density NAND flash option for designs that require parallel interface memory in a TSOP I package.
Key Features
- Memory Technology Non-volatile FLASH – NAND architecture suitable for persistent data storage, implemented as an 8G × 8 memory organization.
- Capacity 64 Gbit total memory size, providing high-density storage in a single-device solution.
- Interface & Voltage Parallel memory interface with a supply voltage range of 2.7 V to 3.6 V for compatibility with common 3 V system rails.
- Package 48-TSOP I / 48-TFSOP package (0.724" / 18.40 mm width) optimized for board-level mounting and space-conscious PCB layouts.
- Operating Temperature Specified operating temperature range from -40°C to 85°C (TA) for extended-temperature operation.
Unique Advantages
- High storage density: 64 Gbit capacity in a single 48-TSOP I device reduces component count for large data storage requirements.
- Parallel interface compatibility: Parallel memory interface supports designs that require parallel FLASH access and legacy parallel bus integration.
- Wide supply range: 2.7 V to 3.6 V operation enables use with common 3 V system power domains.
- Compact TSOP I package: 48-TFSOP (0.724", 18.40 mm width) provides a standard form factor for board-level integration.
- Extended operating temperature: -40°C to 85°C rating supports deployments across a broad thermal envelope.
Why Choose MT29F64G08CBABAWP-IT:B TR?
The MT29F64G08CBABAWP-IT:B TR combines high-density NAND FLASH memory with a parallel interface and a compact 48-TSOP I package, offering a straightforward integration path for systems requiring 64 Gbit of persistent storage. Its 2.7 V–3.6 V supply range and -40°C to 85°C operating temperature make it suitable for designs that need stable operation across common voltage and temperature conditions.
This device is appropriate for designers and procurement teams seeking a single-device, parallel NAND flash solution with a standardized TSOP I footprint, enabling predictable board-level integration and capacity scaling within the constraints of the provided electrical and thermal specifications.
Request a quote or contact sales to discuss availability, lead times, and pricing for the MT29F64G08CBABAWP-IT:B TR.
