MT29F64G08CBABBWP-12IT:B TR
| Part Description |
IC FLASH 64GBIT PAR 48TSOP I |
|---|---|
| Quantity | 348 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 48-TSOP I | Memory Format | FLASH | Technology | FLASH - NAND | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 64 Gbit | Access Time | N/A | Grade | Industrial | ||
| Clock Frequency | 83 MHz | Voltage | 2.7V ~ 3.6V | Memory Type | Non-Volatile | ||
| Operating Temperature | -40°C ~ 85°C (TA) | Write Cycle Time Word Page | N/A | Packaging | 48-TFSOP (0.724", 18.40mm Width) | ||
| Mounting Method | Non-Volatile | Memory Interface | Parallel | Memory Organization | 8G x 8 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | 3A991B1A | HTS Code | 8542.32.0071 |
Overview of MT29F64G08CBABBWP-12IT:B TR – IC FLASH 64GBIT PAR 48TSOP I
The MT29F64G08CBABBWP-12IT:B TR is a 64 Gbit non-volatile FLASH - NAND memory device organized as 8G × 8 with a parallel memory interface. It is supplied in a 48-TSOP I (48-TFSOP) package and operates from a 2.7 V to 3.6 V supply with a specified clock frequency of 83 MHz.
Designed for board-level integration, the device supports an operating ambient temperature range of −40°C to 85°C and is provided in a compact 0.724" (18.40 mm) width TSOP footprint.
Key Features
- Memory Type & Capacity Non-volatile FLASH - NAND memory with a total capacity of 64 Gbit organized as 8G × 8.
- Interface & Clock Parallel memory interface with a clock frequency specified at 83 MHz for synchronous operation.
- Voltage Supply Wide operating supply range from 2.7 V to 3.6 V to match common system rails.
- Package 48-TFSOP / 48-TSOP I package (0.724" / 18.40 mm width) for standard TSOP board mounting.
- Operating Temperature Industrial ambient range of −40°C to 85°C (TA) for deployment across varied environments.
- Memory Organization 8G × 8 organization suitable for system-level memory mapping and addressing.
Unique Advantages
- High-density 64 Gbit capacity: Provides substantial non-volatile storage in a single-device solution.
- Parallel interface at 83 MHz: Matches systems designed for parallel NAND connectivity and the specified clock rate.
- Flexible 2.7–3.6 V supply: Integrates into designs that use standard 3.3 V rails or other systems within this range.
- Extended temperature operation: −40°C to 85°C rating supports use across a wide range of ambient conditions.
- Standard 48-TSOP I package: Enables compact PCB footprint and conventional TSOP assembly processes.
- Predictable 8G × 8 organization: Simplifies memory mapping and system integration considerations.
Why Choose IC FLASH 64GBIT PAR 48TSOP I?
The MT29F64G08CBABBWP-12IT:B TR positions itself as a high-density parallel NAND flash device that balances capacity, voltage flexibility, and a standard TSOP package for straightforward board-level integration. Its specified clock frequency, memory organization, and operating temperature range make it a clear choice when a 64 Gbit non-volatile FLASH solution in a 48-TSOP I footprint is required.
This device suits designs that require large, non-volatile storage with predictable organization and common power rails, offering a robust combination of capacity and packaging for long-term deployment within the stated electrical and thermal limits.
Request a quote or contact sales to discuss availability, pricing, and to submit a quote for MT29F64G08CBABBWP-12IT:B TR.
