MT29F64G08CBCBBH1-10:B
| Part Description |
IC FLASH 64GBIT PARALLEL 100VBGA |
|---|---|
| Quantity | 597 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 100-VBGA (12x18) | Memory Format | FLASH | Technology | FLASH - NAND | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 64 Gbit | Access Time | N/A | Grade | Commercial | ||
| Clock Frequency | 100 MHz | Voltage | 2.7V ~ 3.6V | Memory Type | Non-Volatile | ||
| Operating Temperature | 0°C ~ 70°C (TA) | Write Cycle Time Word Page | N/A | Packaging | 100-VBGA | ||
| Mounting Method | Non-Volatile | Memory Interface | Parallel | Memory Organization | 8G x 8 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | 3A991B1A | HTS Code | 8542.32.0071 |
Overview of MT29F64G08CBCBBH1-10:B – IC FLASH 64GBIT PARALLEL 100VBGA
The MT29F64G08CBCBBH1-10:B is a 64 Gbit parallel NAND flash memory device implemented in non-volatile FLASH technology. It provides an 8G × 8 memory organization with a parallel memory interface and a 100 MHz clock frequency.
This device targets designs requiring high-density non-volatile storage in a compact BGA package, offering a 2.7 V to 3.6 V supply range and an operating temperature range of 0°C to 70°C for room-temperature applications.
Key Features
- Memory Core 64 Gbit capacity implemented as 8G × 8 using FLASH - NAND technology for non-volatile storage.
- Interface & Performance Parallel memory interface with a specified clock frequency of 100 MHz to support system memory transactions.
- Power Operates from a 2.7 V to 3.6 V supply range, compatible with standard 3.3 V system rails.
- Package & Mounting Supplied in a 100-VBGA package (12 × 18 mm), suitable for PCB surface-mount assembly in space-constrained designs.
- Environmental / Temperature Rated for operation from 0°C to 70°C (TA), appropriate for room-temperature electronics environments.
Unique Advantages
- High-density storage: 64 Gbit capacity (8G × 8) provides substantial non-volatile memory within a single device to reduce component count.
- Parallel interface at 100 MHz: Enables straightforward parallel integration with systems that use parallel memory buses, supporting established board-level interfaces.
- Wide supply range: 2.7 V to 3.6 V operation allows compatibility with common 3.3 V systems and some lower-voltage platforms.
- Compact BGA footprint: 100-VBGA (12 × 18) package delivers a small form factor for space-constrained PCBs while providing robust solderable termination.
- Non-volatile NAND FLASH technology: Provides persistent data retention suitable for applications requiring long-term storage without power.
- Room-temperature rated: Specified operating range of 0°C to 70°C for standard commercial environments.
Why Choose IC FLASH 64GBIT PARALLEL 100VBGA?
This parallel NAND flash device is positioned for designers who need a high-density, non-volatile memory solution in a compact BGA package, operating from standard 3.3 V-compatible rails. Its 64 Gbit capacity, parallel interface, and 100 MHz clock frequency make it suitable for systems that require large onboard storage with a parallel-memory integration approach.
Choose the MT29F64G08CBCBBH1-10:B when your design requires a single-device, high-capacity FLASH solution with defined operating conditions and a small PCB footprint, providing straightforward integration and predictable electrical and thermal specifications.
Request a quote or submit an inquiry to obtain pricing, availability, and lead-time information for the MT29F64G08CBCBBH1-10:B.
