MT29F64G08CBCBBH1-10:B TR
| Part Description |
IC FLASH 64GBIT PARALLEL 100VBGA |
|---|---|
| Quantity | 562 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 100-VBGA (12x18) | Memory Format | FLASH | Technology | FLASH - NAND | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 64 Gbit | Access Time | N/A | Grade | Commercial | ||
| Clock Frequency | 100 MHz | Voltage | 2.7V ~ 3.6V | Memory Type | Non-Volatile | ||
| Operating Temperature | 0°C ~ 70°C (TA) | Write Cycle Time Word Page | N/A | Packaging | 100-VBGA | ||
| Mounting Method | Non-Volatile | Memory Interface | Parallel | Memory Organization | 8G x 8 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS3 Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | 3A991B1A | HTS Code | 8542.32.0071 |
Overview of MT29F64G08CBCBBH1-10:B TR – IC FLASH 64GBIT PARALLEL 100VBGA
The MT29F64G08CBCBBH1-10:B TR is a 64 Gbit non-volatile NAND flash memory device manufactured by Micron Technology Inc. It implements FLASH - NAND technology with an 8G × 8 memory organization and a parallel memory interface.
Packaged in a 100-VBGA (12 × 18) package and supporting a 2.7 V to 3.6 V supply range and a 100 MHz clock frequency, this device targets designs that require high-density parallel NAND storage within a compact BGA footprint and commercial temperature operation (0°C to 70°C).
Key Features
- Memory Core Non-volatile FLASH - NAND technology designed for persistent data storage.
- Capacity & Organization 64 Gbit memory size with an 8G × 8 organization providing byte-wide data access.
- Interface & Performance Parallel memory interface with a specified clock frequency of 100 MHz for synchronous operation.
- Power Operates from a 2.7 V to 3.6 V supply range.
- Package & Mounting Supplied in a 100-VBGA (12 × 18) package suitable for surface-mount assembly.
- Operating Temperature Commercial temperature rating: 0°C to 70°C (TA).
Typical Applications
- Embedded storage Use as non-volatile storage in systems that require large-capacity NAND flash within a compact VBGA package.
- Firmware and code storage Suitable for storing firmware or system code where 64 Gbit capacity and a parallel interface are required.
- Parallel-interface devices Integrates into designs that utilize an 8-bit parallel memory interface and require FLASH - NAND technology.
Unique Advantages
- High density, compact footprint: 64 Gbit capacity in a 100-VBGA (12 × 18) package conserves board area while providing substantial storage.
- Byte-wide organization: 8G × 8 memory organization provides byte-oriented access for systems designed around an 8-bit parallel interface.
- Standard supply voltage: 2.7 V to 3.6 V operation aligns with common system power rails.
- Defined clock support: 100 MHz clock frequency specification supports synchronous parallel memory timing.
- Commercial temperature rating: Rated for 0°C to 70°C operation to meet commercial-class deployment requirements.
Why Choose IC FLASH 64GBIT PARALLEL 100VBGA?
The MT29F64G08CBCBBH1-10:B TR provides a clear specification set for designers needing 64 Gbit NAND flash with an 8-bit parallel interface, a 100-VBGA package, and a 2.7 V to 3.6 V supply range. Its commercial temperature rating and 100 MHz clock specification make it suitable for systems that require defined operating parameters and compact packaging.
Manufactured by Micron Technology Inc., this device is appropriate for product designs that require high-density parallel NAND flash capacity in a compact BGA form factor and for teams specifying parts with explicit supply, clock, and temperature requirements.
Request a quote or submit an inquiry to receive pricing and availability information for the MT29F64G08CBCBBH1-10:B TR and to begin the procurement process.
