MT29F64G08CBCDBJ4-6R:D TR
| Part Description |
IC FLASH 64GBIT PAR 132VBGA |
|---|---|
| Quantity | 130 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 132-VBGA (12x18) | Memory Format | FLASH | Technology | FLASH - NAND | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 64 Gbit | Access Time | N/A | Grade | Commercial | ||
| Clock Frequency | 167 MHz | Voltage | 2.7V ~ 3.6V | Memory Type | Non-Volatile | ||
| Operating Temperature | 0°C ~ 70°C (TA) | Write Cycle Time Word Page | N/A | Packaging | 132-VBGA | ||
| Mounting Method | Non-Volatile | Memory Interface | Parallel | Memory Organization | 8G x 8 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS3 Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | 3A991B1A | HTS Code | 8542.32.0071 |
Overview of MT29F64G08CBCDBJ4-6R:D TR – IC FLASH 64GBIT PAR 132VBGA
The MT29F64G08CBCDBJ4-6R:D TR from Micron Technology Inc. is a 64 Gbit non-volatile NAND FLASH memory device with a parallel memory interface. It provides an 8G × 8 memory organization and operates from a 2.7 V to 3.6 V supply.
This device is packaged in a compact 132-VBGA (12×18) and is specified for an operating ambient temperature range of 0°C to 70°C, offering a balance of density, package footprint, and electrical compatibility for systems that require parallel FLASH storage.
Key Features
- Memory Type & Technology Non-volatile FLASH using NAND technology for persistent data storage.
- Capacity & Organization 64 Gbit total capacity arranged as 8G × 8 for byte-wide memory operations.
- Interface & Performance Parallel memory interface with a specified clock frequency of 167 MHz.
- Power Operates from a 2.7 V to 3.6 V supply range, supporting common system voltage domains.
- Package 132-VBGA (12×18) supplier device package that minimizes board area while providing BGA mounting.
- Operating Temperature Specified for use in ambient temperatures from 0°C to 70°C (TA).
Unique Advantages
- High-density storage: 64 Gbit capacity enables significant non-volatile storage in a single device.
- Byte-wide organization: 8G × 8 arrangement simplifies integration with byte-oriented data buses.
- Parallel interface: Parallel memory interface and 167 MHz clock frequency facilitate straightforward timing integration with parallel-memory designs.
- Flexible supply range: 2.7 V to 3.6 V operation supports compatibility with typical 3.3 V system rails.
- Compact VBGA package: 132-VBGA (12×18) package reduces PCB footprint while providing a BGA mounting option.
- Validated operating range: Rated for 0°C to 70°C ambient operation for standard temperature applications.
Why Choose MT29F64G08CBCDBJ4-6R:D TR?
The MT29F64G08CBCDBJ4-6R:D TR is positioned for designs that require a high-density NAND FLASH device with a parallel interface and standard 3.3 V-class power compatibility. Its 8G × 8 organization, 167 MHz clocking, and 132-VBGA footprint make it suitable where compact, byte-wide non-volatile storage is needed.
Manufactured by Micron Technology Inc., this device offers a combination of capacity, packaging, and electrical characteristics that support straightforward integration into systems with ambient operating requirements from 0°C to 70°C.
Request a quote or submit an inquiry to receive pricing and availability information for the MT29F64G08CBCDBJ4-6R:D TR.
