MT29F64G08CBCGBJ4-5M:G TR
| Part Description |
IC FLASH 64GBIT PAR 132VBGA |
|---|---|
| Quantity | 1,548 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 132-VBGA (12x18) | Memory Format | FLASH | Technology | FLASH - NAND | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 64 Gbit | Access Time | N/A | Grade | Commercial | ||
| Clock Frequency | 200 MHz | Voltage | 2.7V ~ 3.6V | Memory Type | Non-Volatile | ||
| Operating Temperature | 0°C ~ 70°C (TA) | Write Cycle Time Word Page | N/A | Packaging | 132-VBGA | ||
| Mounting Method | Non-Volatile | Memory Interface | Parallel | Memory Organization | 8G x 8 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS3 Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | 3A991B1A | HTS Code | 8542.32.0071 |
Overview of MT29F64G08CBCGBJ4-5M:G TR – IC FLASH 64Gbit Parallel 132‑VBGA
The MT29F64G08CBCGBJ4-5M:G TR is a 64 Gbit non-volatile NAND flash memory device provided in a 132‑ball VBGA package (12×18). It implements parallel NAND flash architecture with an 8G × 8 memory organization and supports a 200 MHz clock frequency.
This device is intended for system designs that require high-density, parallel-interface flash storage within a compact VBGA package and operating from a 2.7 V to 3.6 V supply range.
Key Features
- Memory Type and Architecture Non-volatile NAND flash memory organized as 8G × 8, providing a total capacity of 64 Gbit.
- Interface Parallel memory interface for integration with systems that support parallel NAND connectivity.
- Performance Supports a 200 MHz clock frequency for synchronous operation.
- Power Operates from a single supply voltage range of 2.7 V to 3.6 V.
- Package Supplied in a 132‑VBGA package (12×18 mm), offering a compact footprint for board-level integration.
- Operating Temperature Rated for commercial temperature operation from 0 °C to 70 °C (TA).
Typical Applications
- Embedded storage Use as onboard non-volatile storage in systems that require parallel NAND flash memory.
- Firmware and code storage Storage of system firmware and boot code where a parallel flash interface is employed.
- Data logging On-device data retention and logging in applications operating within the specified temperature and voltage ranges.
Unique Advantages
- High storage density: 64 Gbit capacity in a single device supports larger code and data storage needs without multiple components.
- Parallel interface compatibility: Parallel NAND interface simplifies integration into legacy or parallel-oriented system architectures.
- Compact VBGA package: 132‑VBGA (12×18) package enables space-efficient board designs.
- Flexible supply range: 2.7 V to 3.6 V operation accommodates common system power rails.
- Commercial temperature rating: 0 °C to 70 °C operation aligns with standard commercial applications.
- Defined timing: 200 MHz clock frequency support provides a clear timing reference for system design.
Why Choose IC FLASH 64GBIT PAR 132VBGA?
The MT29F64G08CBCGBJ4-5M:G TR positions itself as a high-density parallel NAND flash option for designers needing 64 Gbit of non-volatile storage in a compact 132‑VBGA package. Its defined electrical and timing characteristics—2.7 V to 3.6 V supply, 200 MHz clock, and 0 °C to 70 °C operating range—make it suitable for commercial systems that require reliable parallel flash integration.
This device is appropriate for engineers and procurement teams seeking a single-component storage solution that simplifies board layout, maintains a small footprint, and provides a clear electrical and mechanical specification set for integration and long-term production planning.
Request a quote or contact sales to inquire about availability, pricing, and lead times for the MT29F64G08CBCGBJ4-5M:G TR.
