MT29F64G08CBCGBL04A3WC1-R
| Part Description |
IC FLASH 64GBIT PARALLEL DIE |
|---|---|
| Quantity | 355 Available (as of May 6, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | Die | Memory Format | FLASH | Technology | FLASH - NAND | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 64 Gbit | Access Time | N/A | Grade | Commercial | ||
| Clock Frequency | N/A | Voltage | 2.7V ~ 3.6V | Memory Type | Non-Volatile | ||
| Operating Temperature | 0°C ~ 70°C (TA) | Write Cycle Time Word Page | N/A | Packaging | Die | ||
| Mounting Method | Non-Volatile | Memory Interface | Parallel | Memory Organization | 8G x 8 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS3 Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | 3A991B1A | HTS Code | 8542.32.0071 |
Overview of MT29F64G08CBCGBL04A3WC1-R – Parallel NAND Flash Die
The MT29F64G08CBCGBL04A3WC1-R from Micron Technology Inc. is a 64 Gbit non-volatile NAND flash memory provided in die form. It implements an 8G × 8 memory organization with a parallel interface and is targeted at designs that require high-density parallel flash storage.
Specifically configured for operation within a 2.7V to 3.6V supply range and an ambient temperature range of 0°C to 70°C, this die is intended for integration where direct die-level flash is required and board-level integration is part of the system design.
Key Features
- Memory Type & Capacity Non-volatile NAND flash memory with a total capacity of 64 Gbit, organized as 8G × 8 for high-density storage.
- Interface Parallel memory interface for direct parallel access and integration into parallel-memory architectures.
- Supply Voltage Operates from 2.7V to 3.6V, allowing compatibility with common 3V system power rails.
- Package Supplied as a die, enabling direct integration into custom packages, multi-die modules, or board-level assembly processes.
- Operating Temperature Rated for ambient operation from 0°C to 70°C (TA), suitable for room-temperature commercial environments.
- Technology Built on NAND flash technology to provide persistent, non-volatile data storage at die level.
Typical Applications
- Firmware and Bootcode Storage — Provides non-volatile storage for system firmware and boot images where a parallel NAND interface is used.
- Embedded Systems — Integrates into embedded designs that require die-level flash memory and a 2.7V–3.6V supply.
- Storage Subsystems — Serves as a high-density flash component in custom storage modules or multi-die memory assemblies.
Unique Advantages
- High storage density: 64 Gbit capacity in an 8G × 8 organization provides substantial non-volatile storage in a single die.
- Parallel interface: Parallel memory interface simplifies integration into legacy or parallel-oriented memory architectures.
- Flexible supply range: 2.7V to 3.6V operation aligns with common system power rails for straightforward system integration.
- Die-level packaging: Supplied as a die to enable custom packaging, board-level placement, or multi-die module designs.
- Commercial temperature rating: Specified 0°C to 70°C operating range for typical commercial applications.
Why Choose IC FLASH 64GBIT PARALLEL DIE?
The MT29F64G08CBCGBL04A3WC1-R offers a focused solution for designers needing a high-density, parallel NAND flash die from a established memory manufacturer. Its die form factor and 8G × 8 organization make it suitable for integration into custom memory modules and systems that require direct die placement.
With operation across a common 2.7V–3.6V supply and a specified commercial temperature range, this flash die provides predictable electrical and environmental parameters for commercial embedded designs where non-volatile parallel memory is required.
Request a quote or contact sales to inquire about availability, pricing, and lead times for the MT29F64G08CBCGBL04A3WC1-R.
