MT29F64G08CBEDBJ4-12:D TR
| Part Description |
IC FLASH 64GBIT PAR 132VBGA |
|---|---|
| Quantity | 67 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 132-VBGA (12x18) | Memory Format | FLASH | Technology | FLASH - NAND | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 64 Gbit | Access Time | N/A | Grade | Commercial | ||
| Clock Frequency | 83 MHz | Voltage | 2.7V ~ 3.6V | Memory Type | Non-Volatile | ||
| Operating Temperature | 0°C ~ 70°C (TA) | Write Cycle Time Word Page | N/A | Packaging | 132-VBGA | ||
| Mounting Method | Non-Volatile | Memory Interface | Parallel | Memory Organization | 8G x 8 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS3 Compliant | REACH Compliance | REACH Unknown | ||
| Qualification | N/A | ECCN | OBSOLETE | HTS Code | N/A |
Overview of MT29F64G08CBEDBJ4-12:D TR – 64 Gbit Parallel NAND Flash, 132-VBGA
The MT29F64G08CBEDBJ4-12:D TR is a 64 Gbit non-volatile FLASH memory device using NAND technology. It is organized as 8G × 8 and provides a parallel memory interface in a 132-VBGA (12 × 18) package.
This device targets designs that require large-capacity parallel FLASH storage with a defined commercial operating range and standard 3.0 V class supply voltage.
Key Features
- Memory Type & Architecture 64 Gbit NAND FLASH organized as 8G × 8 for parallel data access and mass non-volatile storage.
- Interface Parallel memory interface suitable for systems requiring parallel FLASH communication.
- Clock Performance Supports an 83 MHz clock frequency for synchronous operation at the specified rate.
- Voltage Supply Operates from 2.7 V to 3.6 V, compatible with standard 3.0 V system power rails.
- Package Supplied in a 132-VBGA package (12 × 18 mm) that provides a compact footprint for board-level integration.
- Operating Temperature Rated for a commercial temperature range of 0°C to 70°C (TA).
- Memory Format FLASH memory format optimized for non-volatile code and data storage.
Typical Applications
- Embedded Storage — Provides 64 Gbit of parallel NAND FLASH for embedded systems requiring large non-volatile memory capacity.
- Firmware and Boot Storage — Suitable for storing firmware images and boot code with parallel access in system controllers.
- Mass Data Storage — Acts as high-density non-volatile memory for designs that use parallel FLASH for bulk data retention.
Unique Advantages
- High Capacity: 64 Gbit density supports large amounts of non-volatile data and code storage on a single device.
- Parallel Interface: Parallel memory organization (8G × 8) enables integration into systems that require parallel FLASH access.
- Standard Supply Voltage: 2.7 V to 3.6 V operation aligns with common 3.0 V system power domains.
- Compact VBGA Package: 132-VBGA (12 × 18 mm) footprint simplifies board layout while providing high pin density.
- Defined Commercial Temperature: Rated for 0°C to 70°C, matching typical commercial application environments.
Why Choose IC FLASH 64GBIT PAR 132VBGA?
The MT29F64G08CBEDBJ4-12:D TR delivers a straightforward, high-density NAND FLASH option for designs that require parallel-access non-volatile memory in a compact VBGA package. With a 64 Gbit capacity, 8G × 8 organization, and an 83 MHz clock rating, it meets needs for large memory footprints on 3.0 V class systems within a commercial temperature range.
Manufactured by Micron Technology Inc., this device is suitable for engineers and procurement teams seeking a verified parallel FLASH memory component for applications that align with its specified voltage and temperature characteristics.
Request a quote or contact sales to discuss availability, pricing, and lead times for the MT29F64G08CBEDBJ4-12:D TR.
