MT29F64G08CBEDBL84C3WC1-R

The MT29F64G08CBEDBL84C3WC1-R is a 64 Gbit non-volatile FLASH NAND memory organized as 8G × 8 and delivered in die form. It provides parallel NAND flash storage with a supply voltage range of 2.7 V to 3.6 V and an operating temperature range of 0 °C to 70 °C.

As a die-package NAND device with a parallel memory interface, this part is intended for integration into designs that require high-density, non-volatile memory in a raw die format for custom assembly or module-level incorporation.

Key Features

• Memory Core  Non-volatile FLASH NAND technology delivering 64 Gbit of storage arranged as 8G × 8 for byte-oriented memory organization.
• Memory Interface  Parallel memory interface suitable for systems designed to work with parallel NAND configurations.
• Power  Operates from a 2.7 V to 3.6 V supply range, enabling compatibility with common 3 V system power rails.
• Package  Supplied as a die (Package Case: Die, Supplier Device Package: Die) for direct integration into custom assemblies or module-level packaging.
• Environmental / Temperature Range  Specified operating ambient temperature of 0 °C to 70 °C (TA).

Typical Applications

• Embedded Storage  Onboard non-volatile memory for electronic systems that require parallel NAND flash capacity in die form.
• Firmware and Code Storage  Storage of firmware or large code images in designs that use a parallel NAND interface and require 64 Gbit density.
• Custom Module Integration  Integration into custom packages, memory modules, or multi-die assemblies where a die-format NAND flash is required.
• Industrial Electronics  Non-volatile data storage in systems operating within the specified 0 °C to 70 °C temperature range.

Unique Advantages

• 64 Gbit density:  Provides a high-capacity single-die solution for applications that need substantial non-volatile storage.
• Standard memory organization (8G × 8):  Byte-oriented organization that aligns with parallel NAND design requirements.
• Parallel interface:  Compatible with systems and controllers that use parallel NAND connectivity for straightforward integration.
• Die form factor:  Die packaging allows direct incorporation into custom assemblies, module builds, or advanced packaging flows.
• Flexible supply voltage:  2.7 V to 3.6 V operation supports common 3 V system power domains.

Why Choose MT29F64G08CBEDBL84C3WC1-R?

The MT29F64G08CBEDBL84C3WC1-R positions itself as a high-density, parallel-interface NAND flash die for designs requiring non-volatile storage in a raw die format. Its 64 Gbit capacity, 8G × 8 organization, and 2.7 V to 3.6 V supply range make it suitable for integration into custom modules and systems that accept parallel NAND memory.

This device is well suited to engineers and integrators building custom memory assemblies or embedding high-density flash at the die level, offering predictable electrical and thermal operating bounds for design planning and system validation.

Request a quote or contact sales to discuss availability, pricing, and integration options for the MT29F64G08CBEDBL84C3WC1-R.