MT29F64G08CECCBH1-12Z:C
| Part Description |
IC FLASH 64GBIT PARALLEL 100VBGA |
|---|---|
| Quantity | 261 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 100-VBGA (12x18) | Memory Format | FLASH | Technology | FLASH - NAND | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 64 Gbit | Access Time | N/A | Grade | Commercial | ||
| Clock Frequency | 83 MHz | Voltage | 2.7V ~ 3.6V | Memory Type | Non-Volatile | ||
| Operating Temperature | 0°C ~ 70°C (TA) | Write Cycle Time Word Page | N/A | Packaging | 100-VBGA | ||
| Mounting Method | Non-Volatile | Memory Interface | Parallel | Memory Organization | 8G x 8 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS3 Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | 3A991B1A | HTS Code | 8542.32.0071 |
Overview of MT29F64G08CECCBH1-12Z:C – IC FLASH 64GBIT PARALLEL 100VBGA
The MT29F64G08CECCBH1-12Z:C is a 64 Gbit non-volatile NAND flash memory device from Micron Technology Inc. It uses FLASH – NAND technology with an 8G × 8 memory organization and a parallel memory interface.
Designed for applications requiring high-density parallel flash, the device offers an 83 MHz clock frequency, a 2.7 V–3.6 V supply range, and a compact 100-VBGA (12×18) package. The specified operating ambient temperature range is 0°C–70°C.
Key Features
- Memory Type Non-volatile FLASH – NAND memory providing 64 Gbit of storage capacity in an 8G × 8 organization.
- Interface & Timing Parallel memory interface with a clock frequency of 83 MHz for synchronous operation with parallel host controllers.
- Power Operating supply voltage range of 2.7 V to 3.6 V to accommodate common 3 V system rails.
- Package & Mounting Supplied in a 100-VBGA package (12×18 mm) suitable for board-level surface mounting.
- Operating Temperature Commercial ambient temperature rating of 0°C to 70°C (TA).
- Manufacturer Produced by Micron Technology Inc., identified as part number MT29F64G08CECCBH1-12Z:C.
Unique Advantages
- High-density storage: 64 Gbit capacity supports substantial on-board data storage without external devices.
- Parallel interface: Parallel memory interface enables direct integration with systems designed for parallel NAND flash.
- Flexible supply range: 2.7 V–3.6 V operation fits standard 3 V power domains.
- Compact BGA footprint: 100-VBGA (12×18) package reduces board area while maintaining high-pin integration.
- Vendor-backed device: Manufactured by Micron Technology Inc., providing supply-chain traceability to the listed manufacturer.
- Commercial temperature rating: 0°C–70°C ambient range suitable for standard commercial applications.
Why Choose MT29F64G08CECCBH1-12Z:C?
The MT29F64G08CECCBH1-12Z:C positions itself as a high-capacity parallel NAND flash option that combines 64 Gbit density, a parallel interface, and industry-standard supply-voltage compatibility. Its 100-VBGA (12×18) package and commercial temperature rating make it suitable for space-conscious, board-mounted designs operating in standard ambient conditions.
Engineers and procurement teams seeking a Micron-manufactured parallel NAND flash device with clearly specified electrical, package, and temperature characteristics can consider this part for designs that require verified capacity and defined operating parameters.
Request a quote or contact sales to discuss pricing, availability, and lead times for MT29F64G08CECCBH1-12Z:C.
