MT29F64G08CECCBH1-12Z:C TR

The MT29F64G08CECCBH1-12Z:C TR is a 64 Gbit non-volatile flash memory device from Micron Technology Inc. It uses NAND flash architecture with an 8G × 8 memory organization and a parallel memory interface.

Offered in a 100‑VBGA (12×18) package and operating from a 2.7 V to 3.6 V supply at ambient temperatures from 0°C to 70°C, this device targets systems requiring high-density parallel flash storage with defined timing at an 83 MHz clock frequency.

Key Features

• Memory Type & Technology Non-volatile FLASH NAND memory with a total capacity of 64 Gbit organized as 8G × 8.
• Memory Interface & Timing Parallel memory interface with a specified clock frequency of 83 MHz for memory transactions.
• Voltage Supply Operates across a 2.7 V to 3.6 V supply range to match common system power rails.
• Package Supplied in a 100‑VBGA package (12×18) for compact board-level integration.
• Operating Temperature Rated for ambient operation from 0°C to 70°C (TA).
• Memory Organization & Format Organized as 8G × 8 in a parallel FLASH memory format suitable for embedded storage implementations.

Typical Applications

• Parallel NAND storage systems — Provides high-density non-volatile storage where a parallel flash interface is required.
• Embedded devices — Integrates into embedded designs that need solid-state flash memory in a compact 100‑VBGA package.
• Consumer electronics — Fits consumer products operating within the 0°C to 70°C ambient range that require NAND flash capacity and parallel access.

Unique Advantages

• High-density 64 Gbit capacity: Supports large non-volatile storage requirements within a single device footprint.
• Parallel interface with defined timing: The parallel memory interface and 83 MHz clock frequency provide predictable timing characteristics for system integration.
• Wide supply voltage range: 2.7 V to 3.6 V operation enables compatibility with common system power rails.
• Compact 100‑VBGA (12×18) package: Space-efficient packaging for board-level integration in size-constrained designs.
• Ambient temperature rating: Specified for 0°C to 70°C operation to match a range of commercial applications.

Why Choose IC FLASH 64GBIT PARALLEL 100VBGA?

The MT29F64G08CECCBH1-12Z:C TR positions itself as a high-density parallel NAND flash device that balances capacity, interface compatibility, and compact packaging. Its 8G × 8 organization and 64 Gbit capacity make it suitable for designs that require substantial non-volatile storage in a 100‑VBGA package.

This device is appropriate for engineers and procurement teams specifying parallel NAND flash for embedded, storage, or consumer applications within a 0°C to 70°C ambient range and operating on 2.7 V to 3.6 V supplies. Its defined clock frequency and package details support straightforward integration into systems with parallel memory architectures.

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