MT29F64G08CECCBH1-12ITZ:C

IC FLASH 64GBIT PARALLEL 100VBGA
Part Description

IC FLASH 64GBIT PARALLEL 100VBGA

Quantity 1,450 Available (as of May 5, 2026)
Product CategoryMemory
ManufacturerMicron Technology Inc.
Manufacturing StatusObsolete
Manufacturer Standard Lead TimeRFQ
Datasheet

Specifications & Environmental

Device Package100-VBGA (12x18)Memory FormatFLASHTechnologyFLASH - NAND
Memory Size64 GbitAccess TimeN/AGradeIndustrial
Clock Frequency83 MHzVoltage2.7V ~ 3.6VMemory TypeNon-Volatile
Operating Temperature-40°C ~ 85°C (TA)Write Cycle Time Word PageN/APackaging100-VBGA
Mounting MethodNon-VolatileMemory InterfaceParallelMemory Organization8G x 8
Moisture Sensitivity Level3 (168 Hours)RoHS ComplianceROHS3 CompliantREACH ComplianceREACH Unaffected
QualificationN/AECCN3A991B1AHTS Code8542.32.0071

Overview of MT29F64G08CECCBH1-12ITZ:C – IC FLASH 64GBIT PARALLEL 100VBGA

The MT29F64G08CECCBH1-12ITZ:C is a 64 Gbit non-volatile NAND flash memory organized as 8G × 8 and delivered in a 100‑VBGA (12×18) package. It provides a parallel memory interface and a specified clock frequency of 83 MHz for systems requiring parallel flash storage.

Designed for applications that require high-density NAND flash in a compact BGA footprint, this device supports operation across a 2.7 V to 3.6 V supply range and an ambient temperature range of −40°C to 85°C (TA).

Key Features

  • Memory Architecture 64 Gbit capacity, organized as 8G × 8 using NAND flash technology to provide non-volatile storage.
  • Interface Parallel memory interface suitable for systems expecting parallel NAND connectivity.
  • Clock Frequency Specified clock frequency of 83 MHz for timing reference in supported systems.
  • Power Operates from a 2.7 V to 3.6 V supply range to match common system power rails.
  • Package 100‑VBGA (12×18) package case providing a compact BGA form factor for board-level integration.
  • Temperature Range Rated for operation from −40°C to 85°C (TA), supporting a wide ambient operating range.

Typical Applications

  • Embedded Storage — Provides 64 Gbit of non-volatile NAND flash capacity for embedded systems that require parallel flash memory in a compact BGA package.
  • Firmware and Code Storage — Suitable for storing firmware or code images where a parallel NAND interface and 8G × 8 organization are required.
  • Industrial Systems — Can be used in industrial designs that need operation across a −40°C to 85°C ambient range and a 2.7 V–3.6 V supply window.

Unique Advantages

  • High-density NAND capacity: 64 Gbit (8G × 8) organization delivers substantial non-volatile storage in a single device.
  • Parallel interface compatibility: Parallel memory interface and defined 83 MHz clock frequency simplify integration into parallel NAND architectures.
  • Flexible power range: 2.7 V to 3.6 V supply support enables use with common system power rails.
  • Compact BGA package: 100‑VBGA (12×18) package minimizes board footprint while providing a standardized BGA mounting option.
  • Extended ambient operation: Rated for −40°C to 85°C (TA) to address a wide range of environmental conditions.

Why Choose IC FLASH 64GBIT PARALLEL 100VBGA?

The MT29F64G08CECCBH1-12ITZ:C positions itself as a straightforward, high-density parallel NAND flash memory option for designs that require 64 Gbit of non-volatile storage in a 100‑VBGA package. Its specified 83 MHz clock frequency, 2.7 V–3.6 V supply range, and −40°C to 85°C operating window make it suitable for systems where a compact parallel NAND solution is needed.

This device is well-suited for engineers and procurement teams seeking a clearly specified NAND flash part with compact packaging and defined electrical and thermal operating parameters for embedded storage, firmware retention, and industrial memory applications.

Request a quote or submit an inquiry to obtain pricing, availability, and lead-time information for MT29F64G08CECCBH1-12ITZ:C.

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