MT29F64G08CFACAWP-Z:C TR
| Part Description |
IC FLASH 64GBIT PAR 48TSOP I |
|---|---|
| Quantity | 1,357 Available (as of May 6, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 48-TSOP I | Memory Format | FLASH | Technology | FLASH - NAND | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 64 Gbit | Access Time | N/A | Grade | Commercial | ||
| Clock Frequency | N/A | Voltage | 2.7V ~ 3.6V | Memory Type | Non-Volatile | ||
| Operating Temperature | 0°C ~ 70°C (TA) | Write Cycle Time Word Page | N/A | Packaging | 48-TFSOP (0.724", 18.40mm Width) | ||
| Mounting Method | Non-Volatile | Memory Interface | Parallel | Memory Organization | 8G x 8 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS3 Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | 3A991B1A | HTS Code | 8542.32.0071 |
Overview of MT29F64G08CFACAWP-Z:C TR – 64Gbit Parallel NAND Flash, 48‑TSOP I
The MT29F64G08CFACAWP-Z:C TR is a 64 Gbit non‑volatile FLASH memory device based on NAND technology. It provides parallel memory organization and is supplied in a 48‑TSOP I package.
This device is intended for systems that require high‑density non‑volatile storage with a parallel interface, operating over a commercial temperature range and a standard 2.7 V to 3.6 V supply window.
Key Features
- Memory Type & Technology Non‑volatile FLASH using NAND technology for bulk storage.
- Density & Organization 64 Gbit total memory capacity with an 8G × 8 memory organization.
- Interface Parallel memory interface for integration with parallel flash controller architectures.
- Voltage Supply Operates from 2.7 V to 3.6 V, supporting standard single‑supply system designs.
- Package Supplied in a 48‑TFSOP / 48‑TSOP I package (0.724" / 18.40 mm width) for compact board implementation.
- Operating Temperature Commercial operating range of 0°C to 70°C (TA).
- Memory Format FLASH memory format suitable for non‑volatile storage needs.
Unique Advantages
- High storage density: 64 Gbit capacity provides substantial non‑volatile storage in a single device.
- Byte‑organized memory: 8G × 8 organization aligns with parallel data handling requirements.
- Parallel interface compatibility: Designed for systems that utilize parallel FLASH memory interfaces.
- Standard supply range: 2.7 V to 3.6 V operation fits common system power rails.
- Compact package: 48‑TSOP I package with 18.40 mm width enables space‑efficient PCB layouts.
- Commercial temperature suitability: 0°C to 70°C rating supports a wide range of indoor and consumer applications.
Why Choose MT29F64G08CFACAWP-Z:C TR?
The MT29F64G08CFACAWP-Z:C TR provides a straightforward, high‑capacity parallel NAND FLASH option in an industry‑standard TSOP package. Its 64 Gbit density, 8G × 8 organization, and 2.7 V–3.6 V supply window make it suitable for designs that require substantial non‑volatile storage with a parallel interface and commercial temperature operation.
This device is a practical choice for engineers specifying parallel FLASH memory where board space, standard supply voltages, and a defined operating temperature range are primary considerations.
Request a quote or contact sales to discuss pricing, availability, and lead times for the MT29F64G08CFACAWP-Z:C TR.
