MT29F64G08CFACBWP-12Z:C
| Part Description |
IC FLASH 64GBIT PAR 48TSOP I |
|---|---|
| Quantity | 356 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 48-TSOP I | Memory Format | FLASH | Technology | FLASH - NAND | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 64 Gbit | Access Time | N/A | Grade | Commercial | ||
| Clock Frequency | 83 MHz | Voltage | 2.7V ~ 3.6V | Memory Type | Non-Volatile | ||
| Operating Temperature | 0°C ~ 70°C (TA) | Write Cycle Time Word Page | N/A | Packaging | 48-TFSOP (0.724", 18.40mm Width) | ||
| Mounting Method | Non-Volatile | Memory Interface | Parallel | Memory Organization | 8G x 8 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS3 Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | 3A991B1A | HTS Code | 8542.32.0071 |
Overview of MT29F64G08CFACBWP-12Z:C – 64 Gbit Parallel NAND Flash, 48-TSOP I
The MT29F64G08CFACBWP-12Z:C is a 64 Gbit non-volatile FLASH NAND memory device in a 48-TSOP I package. It provides an 8G × 8 memory organization with a parallel interface and operates from a 2.7 V to 3.6 V supply.
This device is intended for systems that require parallel non-volatile memory with a defined operating temperature range of 0°C to 70°C and a clock frequency specification of 83 MHz.
Key Features
- Memory Core 64 Gbit capacity with an 8G × 8 memory organization providing high-density NAND FLASH storage.
- Technology FLASH - NAND non-volatile memory for persistent data retention without power.
- Interface & Performance Parallel memory interface with a specified clock frequency of 83 MHz to match parallel system timing.
- Voltage Range Operates from 2.7 V to 3.6 V, supporting common 3.0 V supply domains.
- Package Supplied in a 48-TSOP I / 48-TFSOP package (0.724", 18.40 mm width) for board-level integration in standard TSOP footprints.
- Operating Temperature Rated for operation from 0°C to 70°C (TA), suitable for temperature-controlled application environments.
Typical Applications
- Embedded non-volatile storage — Provides 64 Gbit of FLASH NAND storage for systems that require persistent data retention with a parallel interface.
- Firmware and code storage — Hosts program code and firmware in designs that use a parallel memory interface and operate within 0°C to 70°C.
- Board-level memory expansion — Fits designs needing a 48-TSOP I packaged parallel NAND device with a 2.7 V–3.6 V supply range.
Unique Advantages
- High-density NAND storage: 64 Gbit capacity enables larger data and firmware images in a single device footprint.
- Standard parallel interface: Parallel memory interface simplifies integration into systems designed for parallel FLASH devices.
- Flexible supply voltage: 2.7 V to 3.6 V operating range supports common 3 V supply rails.
- Compact TSOP packaging: 48-TSOP I / 48-TFSOP package (18.40 mm width) for conventional board-level layouts and assembly.
- Defined operating range: Specified 0°C to 70°C operating temperature for temperature-controlled environments.
- Specified clock rate: 83 MHz clock frequency provides a clear timing reference for parallel interface design.
Why Choose IC FLASH 64GBIT PAR 48TSOP I?
The IC FLASH 64GBIT PAR 48TSOP I (MT29F64G08CFACBWP-12Z:C) positions itself as a high-density parallel NAND FLASH option that combines 64 Gbit capacity, an 8G × 8 organization, and a 48-TSOP I package. Its 2.7 V–3.6 V supply range, 83 MHz clock specification, and 0°C to 70°C operating window make it suitable for designs that require a defined parallel non-volatile memory solution.
This device is appropriate for engineers and procurement teams specifying board-level parallel FLASH for embedded storage, firmware hosting, or memory expansion where the listed electrical, mechanical, and temperature characteristics match system requirements.
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