MT29F64G08CFACBWP-12Z:C

IC FLASH 64GBIT PAR 48TSOP I
Part Description

IC FLASH 64GBIT PAR 48TSOP I

Quantity 356 Available (as of May 5, 2026)
Product CategoryMemory
ManufacturerMicron Technology Inc.
Manufacturing StatusObsolete
Manufacturer Standard Lead TimeRFQ
Datasheet

Specifications & Environmental

Device Package48-TSOP IMemory FormatFLASHTechnologyFLASH - NAND
Memory Size64 GbitAccess TimeN/AGradeCommercial
Clock Frequency83 MHzVoltage2.7V ~ 3.6VMemory TypeNon-Volatile
Operating Temperature0°C ~ 70°C (TA)Write Cycle Time Word PageN/APackaging48-TFSOP (0.724", 18.40mm Width)
Mounting MethodNon-VolatileMemory InterfaceParallelMemory Organization8G x 8
Moisture Sensitivity Level3 (168 Hours)RoHS ComplianceROHS3 CompliantREACH ComplianceREACH Unaffected
QualificationN/AECCN3A991B1AHTS Code8542.32.0071

Overview of MT29F64G08CFACBWP-12Z:C – 64 Gbit Parallel NAND Flash, 48-TSOP I

The MT29F64G08CFACBWP-12Z:C is a 64 Gbit non-volatile FLASH NAND memory device in a 48-TSOP I package. It provides an 8G × 8 memory organization with a parallel interface and operates from a 2.7 V to 3.6 V supply.

This device is intended for systems that require parallel non-volatile memory with a defined operating temperature range of 0°C to 70°C and a clock frequency specification of 83 MHz.

Key Features

  • Memory Core 64 Gbit capacity with an 8G × 8 memory organization providing high-density NAND FLASH storage.
  • Technology FLASH - NAND non-volatile memory for persistent data retention without power.
  • Interface & Performance Parallel memory interface with a specified clock frequency of 83 MHz to match parallel system timing.
  • Voltage Range Operates from 2.7 V to 3.6 V, supporting common 3.0 V supply domains.
  • Package Supplied in a 48-TSOP I / 48-TFSOP package (0.724", 18.40 mm width) for board-level integration in standard TSOP footprints.
  • Operating Temperature Rated for operation from 0°C to 70°C (TA), suitable for temperature-controlled application environments.

Typical Applications

  • Embedded non-volatile storage — Provides 64 Gbit of FLASH NAND storage for systems that require persistent data retention with a parallel interface.
  • Firmware and code storage — Hosts program code and firmware in designs that use a parallel memory interface and operate within 0°C to 70°C.
  • Board-level memory expansion — Fits designs needing a 48-TSOP I packaged parallel NAND device with a 2.7 V–3.6 V supply range.

Unique Advantages

  • High-density NAND storage: 64 Gbit capacity enables larger data and firmware images in a single device footprint.
  • Standard parallel interface: Parallel memory interface simplifies integration into systems designed for parallel FLASH devices.
  • Flexible supply voltage: 2.7 V to 3.6 V operating range supports common 3 V supply rails.
  • Compact TSOP packaging: 48-TSOP I / 48-TFSOP package (18.40 mm width) for conventional board-level layouts and assembly.
  • Defined operating range: Specified 0°C to 70°C operating temperature for temperature-controlled environments.
  • Specified clock rate: 83 MHz clock frequency provides a clear timing reference for parallel interface design.

Why Choose IC FLASH 64GBIT PAR 48TSOP I?

The IC FLASH 64GBIT PAR 48TSOP I (MT29F64G08CFACBWP-12Z:C) positions itself as a high-density parallel NAND FLASH option that combines 64 Gbit capacity, an 8G × 8 organization, and a 48-TSOP I package. Its 2.7 V–3.6 V supply range, 83 MHz clock specification, and 0°C to 70°C operating window make it suitable for designs that require a defined parallel non-volatile memory solution.

This device is appropriate for engineers and procurement teams specifying board-level parallel FLASH for embedded storage, firmware hosting, or memory expansion where the listed electrical, mechanical, and temperature characteristics match system requirements.

Request a quote or submit an inquiry to check availability and pricing for the MT29F64G08CFACBWP-12Z:C.

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