MT29F64G08EBAAAWP-Z:A TR
| Part Description |
IC FLASH 64GBIT PAR 48TSOP I |
|---|---|
| Quantity | 1,062 Available (as of May 6, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 48-TSOP I | Memory Format | FLASH | Technology | FLASH - NAND | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 64 Gbit | Access Time | N/A | Grade | Commercial | ||
| Clock Frequency | N/A | Voltage | 2.7V ~ 3.6V | Memory Type | Non-Volatile | ||
| Operating Temperature | 0°C ~ 70°C (TA) | Write Cycle Time Word Page | N/A | Packaging | 48-TFSOP (0.724", 18.40mm Width) | ||
| Mounting Method | Non-Volatile | Memory Interface | Parallel | Memory Organization | 8G x 8 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS3 Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | 3A991B1A | HTS Code | 8542.32.0071 |
Overview of MT29F64G08EBAAAWP-Z:A TR – IC FLASH 64GBIT PAR 48TSOP I
The MT29F64G08EBAAAWP-Z:A TR is a non-volatile NAND flash memory device with a density of 64 Gbit organized as 8G × 8 and presented in a 48-TSOP I package. It provides a parallel memory interface and operates from a 2.7 V to 3.6 V supply voltage.
This device is intended for designs that require parallel NAND flash storage in a compact 48-TFSOP (0.724", 18.40 mm width) footprint and that operate within a 0°C to 70°C ambient temperature range.
Key Features
- Memory Type: Non-volatile NAND flash technology providing persistent storage without power.
- Memory Capacity & Organization: 64 Gbit capacity organized as 8G × 8 for byte-wide parallel access.
- Interface: Parallel memory interface for direct parallel data connectivity.
- Supply Voltage: Operates from 2.7 V to 3.6 V, compatible with single-supply 3.3 V system domains.
- Package: 48-TFSOP / 48-TSOP I package (0.724" / 18.40 mm width) for compact board-level integration.
- Operating Temperature: Rated for 0°C to 70°C (TA) ambient operation.
Unique Advantages
- High-density storage: 64 Gbit capacity enables larger on-board data storage without adding external devices.
- Byte-wide organization: 8G × 8 organization supports straightforward byte-oriented parallel access and addressing.
- Wide supply range: 2.7 V to 3.6 V operation provides flexibility for systems using common 3.3 V supply rails.
- Compact TSOP I footprint: 48-TSOP I package delivers a space-efficient form factor for PCB-constrained designs.
- Commercial temperature rating: 0°C to 70°C specification aligns with a broad set of ambient operating environments.
Why Choose IC FLASH 64GBIT PAR 48TSOP I?
The MT29F64G08EBAAAWP-Z:A TR is positioned for applications requiring a 64 Gbit parallel NAND flash memory in a 48-TSOP I package, offering a clear combination of capacity, parallel interface, and a 2.7 V–3.6 V supply envelope. Its 8G × 8 organization and TSOP footprint make it suitable for system designs that need byte-wide parallel flash storage within a 0°C to 70°C operating range.
This device provides a straightforward integration path for designs specifying parallel NAND flash memory with defined package and voltage constraints, enabling predictable board-level implementation and capacity planning.
Request a quote or contact sales to discuss availability, pricing, and lead times for the MT29F64G08EBAAAWP-Z:A TR.
