MT29F64G08TAAWP:A TR

The MT29F64G08TAAWP:A TR is a 64‑Gbit NAND flash non-volatile memory device organized as 8G × 8 and implemented with parallel interface signaling. It is supplied in a 48‑TSOP I package (48‑TFSOP, 0.724" / 18.40 mm width) and is intended for use as high-density solid-state storage in electronic systems.

Designed for integration into commercial-temperature applications, the device supports a 2.7 V to 3.6 V supply range and targets designs that require parallel NAND flash memory in a standard TSOP footprint.

Key Features

• Memory Type & Technology Non-volatile FLASH NAND memory providing persistent storage without continuous power.
• Capacity & Organization 64 Gbit total capacity, organized as 8G × 8 to support byte-wide parallel data paths.
• Interface Parallel memory interface suitable for designs using parallel NAND connectivity.
• Voltage Supply Operates from 2.7 V to 3.6 V, accommodating common 3 V system rails.
• Package 48‑TSOP I (48‑TFSOP, 0.724" / 18.40 mm width) standard package for board-level mounting and space planning.
• Operating Temperature Commercial temperature range: 0 °C to 70 °C (TA).
• Mounting Mounting type listed as Non-Volatile in the supplier data.

Typical Applications

• Embedded Systems — Provides non-volatile program and data storage for embedded controllers and microprocessor-based modules requiring parallel NAND flash.
• Consumer Electronics — Used for firmware, user data, and content storage in consumer devices that accept 48‑TSOP packaged parallel NAND devices.
• Networking & Communications Equipment — Suitable for board-level storage of boot code, configuration data, and system images where a parallel NAND interface and 64 Gbit capacity are required.

Unique Advantages

• High-density storage: 64 Gbit capacity enables substantial on-board non-volatile data and firmware storage in a single device.
• Byte-wide organization: 8G × 8 organization provides byte-oriented parallel access for designs that use an 8-bit data bus.
• Standard TSOP packaging: 48‑TSOP I package simplifies PCB layout and replacement in systems designed around common TSOP footprints.
• Wide supply range: 2.7 V to 3.6 V operation supports compatibility with typical 3 V system rails.
• Commercial temperature support: Specified 0 °C to 70 °C operation for general-purpose electronic applications.

Why Choose MT29F64G08TAAWP:A TR?

The MT29F64G08TAAWP:A TR positions itself as a straightforward, high-density NAND flash memory option for designs that require parallel interface connectivity and a standard 48‑TSOP I footprint. Its 64 Gbit capacity and 8G × 8 organization make it suitable for applications needing substantial non-volatile storage in a compact, board-mountable package.

This device is appropriate for engineers and procurement teams targeting commercial-temperature embedded and electronic products that operate on 2.7 V–3.6 V rails and require a parallel NAND memory solution with a familiar TSOP package for integration and layout consistency.

Request a quote or submit an inquiry to receive pricing, availability, and ordering information for the MT29F64G08TAAWP:A TR.