MT40A2G16TBB-062E:F

The MT40A2G16TBB-062E:F is a 32 Gbit DDR4 SDRAM in a TwinDie single‑rank x16 configuration. It assembles two 16Gb x8 DDR4 die into a single x16 device and provides a parallel memory interface for systems requiring high density DDR4 memory.

This device targets designs that need 1.2V DDR4 operation with up to DDR4-3200 performance (3200 MT/s, CL22) and supports standard JEDEC ball‑out in a low‑profile 96‑ball FBGA package (7.5 mm × 13 mm × 1.2 mm).

Key Features

• TwinDie Architecture  Two 16Gb x8 DDR4 die combined to form a single 32Gb x16 device (single‑rank TwinDie).
• DDR4 Performance  DDR4 SDRAM with a speed grade of -062E (3200 MT/s) and target timings CL‑nRCD‑nRP = 22‑22‑22; typical cycle/operation timing 13.75 ns.
• Memory Organization  Organized as 2G × 16 with 128 Meg × 16 × 16 banks × 1 rank; page size 1 KB per bank (A[9:0] column addressing, A[16:0] row addressing).
• Voltage and I/O  VDD = VDDQ = 1.2V nominal (operating range 1.14–1.26V) with 1.2V VDDQ‑terminated I/O.
• Calibration and Addressing  Includes an extra ZQ connection for faster ZQ calibration and BG1 control required for x8 addressing.
• Package and Mounting  Low‑profile 96‑ball FBGA package (7.5 mm × 13 mm × 1.2 mm), JEDEC‑standard ball‑out, single‑rank mounting.
• Operating Temperature  Commercial temperature range 0°C to 95°C; refresh rate: 8192 cycles in 64 ms from 0°C to 85°C and 8192 cycles in 32 ms from 85°C to 95°C.

Typical Applications

• High‑density memory subsystems  Integration where a 32 Gbit DDR4 x16 component is required to achieve compact DRAM capacity.
• Single‑rank x16 designs  Systems that require a single‑rank DDR4 x16 device built from two x8 die for board‑level memory implementations.
• Thermally constrained environments  Deployments operating within 0°C to 95°C that need defined refresh timing behavior at elevated temperatures.

Unique Advantages

• High effective density: Combines two 16Gb die into one 32Gb x16 device to deliver large capacity in a single package.
• JEDEC‑standard footprint: 96‑ball FBGA with JEDEC ball‑out simplifies board layout for compatible DDR4 designs.
• DDR4‑3200 capable: Speed grade -062E supports 3200 MT/s operation with 22‑22‑22 timing (13.75 ns), enabling higher throughput where required.
• Standard 1.2V operation: Nominal VDD/VDDQ = 1.2V with defined operating range (1.14–1.26V) and VDDQ‑terminated I/O for controlled signaling.
• Faster ZQ calibration: Extra ZQ connection included to enable faster ZQ calibration for impedance calibration tasks.
• Defined refresh behavior: Specified refresh cycles at different temperature ranges (64 ms and 32 ms windows) for predictable operation up to 95°C.

Why Choose IC DRAM 32GBIT PARALLEL 96FBGA?

The MT40A2G16TBB-062E:F provides a compact, high‑capacity DDR4 solution using Micron’s TwinDie construction to deliver a single‑rank x16 32 Gbit device. Its JEDEC‑standard 96‑ball FBGA package, 1.2V I/O termination, and DDR4‑3200 speed grade make it suitable for designs that require defined timing, controlled signaling, and a predictable thermal/refresh profile.

This device is appropriate for engineers specifying high‑density parallel DDR4 memory where straightforward integration, JEDEC compatibility, and documented operating parameters (voltage range, timing, and temperature behavior) are required.

Request a quote or submit a parts inquiry to receive pricing and availability information for MT40A2G16TBB-062E:F.