MT40A4G8KVA-083H:G

The MT40A4G8KVA-083H:G is a volatile DDR4 SDRAM device offering 32 Gbit of parallel memory organized as 4G x 8. It delivers high-density DRAM in a compact 78-TFBGA (78-FBGA, 8×12) package with a 1.2 GHz clock frequency for high-throughput applications.

This device is suited for systems and subsystems that require parallel DDR4 memory with defined supply and thermal envelopes, providing predictable operation across a 1.14 V to 1.26 V supply range and an operating temperature range of 0°C to 95°C (TC).

Key Features

• Memory Core DDR4 SDRAM technology with a 32 Gbit capacity organized as 4G × 8 for high-density memory implementations.
• Performance 1.2 GHz clock frequency supporting parallel DRAM interface operation for throughput-focused designs.
• Interface Parallel memory interface suitable for designs that integrate DDR4 parallel DRAM components.
• Power Defined supply voltage range of 1.14 V to 1.26 V to match typical DDR4 power domains.
• Package 78-TFBGA (78-FBGA, 8×12) ball-grid array package that provides a compact footprint for board-level integration.
• Operating Range Specified operating temperature range of 0°C to 95°C (TC) for thermal planning and system validation.
• Memory Characteristics Volatile DRAM memory format intended for system memory and transient data storage.

Typical Applications

• High-density memory subsystems — Provides 32 Gbit of DDR4 parallel DRAM capacity for systems requiring significant volatile memory.
• Embedded computing platforms — Compact 78-FBGA package and DDR4 interface enable integration into space-constrained embedded designs.
• Network and communications equipment — Parallel DDR4 memory suitable for buffering and high-throughput data handling in networking subsystems.

Unique Advantages

• High memory density: 32 Gbit capacity in a single device reduces board-level part count for large-memory designs.
• High-speed operation: 1.2 GHz clock frequency supports demanding throughput requirements where parallel DDR4 is used.
• Compact BGA footprint: 78-TFBGA (8×12) package allows dense placement and efficient board routing.
• Controlled power envelope: Narrow supply range (1.14 V–1.26 V) simplifies power-supply design and validation.
• Defined thermal range: 0°C to 95°C operating temperature supports designs with moderate thermal requirements.

Why Choose IC DRAM 32GBIT PAR 1.2GHZ 78FBGA?

The MT40A4G8KVA-083H:G combines high-capacity DDR4 memory organization with a 1.2 GHz clock and a compact 78-FBGA package, making it suitable for designs that require dense, parallel DRAM in a small footprint. Its defined voltage and operating temperature ranges support predictable integration into systems where supply and thermal constraints are key considerations.

This device is ideal for engineers and procurement teams specifying high-density DDR4 memory for embedded platforms, memory subsystems, and communications equipment that need compact packaging and clear electrical and thermal parameters.

Request a quote or submit a sales inquiry to obtain pricing, availability, and additional integration support for the MT40A4G8KVA-083H:G.