MT40A4G8BAF-062E:B

The MT40A4G8BAF-062E:B is a 32 Gbit DDR4 SDRAM device from Micron Technology Inc., built on the TwinDie™ series architecture. It provides a parallel memory interface in a 78-TFBGA package intended for systems that require DDR4 DRAM capacity and performance.

Key technical characteristics include a 4G × 8 memory organization, a 1.6 GHz clock frequency, an access time of 13.75 ns, and an operating temperature range of 0°C to 95°C (TC), making it suitable for designs that require high-density DDR4 memory in a compact BGA package.

Key Features

• Core / Memory Technology  DDR4 SDRAM technology with TwinDie™ series architecture and a DRAM memory format as specified for high-density memory implementations.
• Capacity & Organization  32 Gbit total capacity arranged as 4G × 8 to support wide data bus implementations and high-density memory requirements.
• Performance  Specified clock frequency of 1.6 GHz and an access time of 13.75 ns to characterize timing performance for system integration.
• Interface  Parallel memory interface for direct integration with parallel DDR4 memory controllers.
• Power  Operating voltage supply range specified at 1.14 V to 1.26 V for system power budgeting and regulator design.
• Package  78-TFBGA package / 78-FBGA (10.5 × 11 mm) supplier device package for compact board-level mounting.
• Thermal Range  Operating temperature range of 0°C to 95°C (TC) for thermal planning and reliability assessment.
• Memory & Mounting Type (as specified)  Product data lists Memory Type and Mounting Type as Non-Volatile while the memory format is shown as DRAM; specifications are presented as provided.

Typical Applications

• System Memory Modules  Used where a 32 Gbit DDR4 parallel memory component is required for board-level memory subsystems.
• Embedded Memory Subsystems  Integrates into designs that need high-density DRAM with a parallel interface and compact BGA footprint.
• High-Density Memory Arrays  Suitable for assemblies that combine multiple DRAM devices to achieve larger memory capacities while maintaining defined timing and voltage characteristics.

Unique Advantages

• High Density 32 Gbit Capacity:  Provides substantial on-board memory capacity within a single DRAM device to reduce external component count.
• TwinDie™ Architecture:  Specified series architecture that distinguishes the device family and informs system layout and memory planning.
• Defined Performance Parameters:  1.6 GHz clock frequency and 13.75 ns access time provide clear timing targets for memory controller integration.
• Compact BGA Package:  78-TFBGA / 78-FBGA (10.5 × 11 mm) package enables dense PCB placement and compact board designs.
• Wide Operating Temperature:  0°C to 95°C (TC) operating range supports designs operating across typical commercial thermal environments.
• Clear Power Envelope:  Voltage supply range of 1.14 V to 1.26 V simplifies power-supply design and margining.

Why Choose IC DRAM 32GBIT PARALLEL 78FBGA?

The MT40A4G8BAF-062E:B positions itself as a high-density DDR4 DRAM device with clearly defined electrical, timing, and thermal specifications for integration into board-level memory solutions. Its 32 Gbit capacity, 4G × 8 organization, and compact 78-FBGA package support designers who need substantial memory in a small footprint.

Engineers designing systems that require DDR4 parallel memory with specified clock, access-time, voltage, and temperature parameters will find the MT40A4G8BAF-062E:B suitable for planning and qualification. The provided specifications allow for predictable integration, scalability in memory arrays, and straightforward power and thermal considerations.

If you require pricing, availability, or a formal quote for the MT40A4G8BAF-062E:B, submit a request for a quote or contact sales to initiate an inquiry.