MT40A2G16TBB-062E:F TR

The MT40A2G16TBB-062E:F TR is a 32Gbit TwinDie DDR4 SDRAM organized as 2G × 16 with a parallel memory interface in a 96-ball FBGA package. It combines two 16Gb x8 die into a single x16 device (TwinDie single-rank) and implements DDR4 signaling and timing for high-speed memory systems.

Built for systems requiring DDR4-3200 performance, the device operates at VDD = VDDQ = 1.2V (1.14–1.26V) and supports an operating temperature range of 0°C to 95°C, with JEDEC-standard ball-out and a low-profile 7.5mm × 13mm package option.

Key Features

• Architecture (TwinDie Single-Rank)  Two 16Gb x8 Micron die combined to form one x16 device; single-rank TwinDie configuration for native x16 operation.
• Density & Organization  32 Gbit total capacity, organized as 2G × 16 with 128M × 16 × 16 banks × 1 rank (configuration documented in the datasheet).
• Performance (DDR4-3200)  Speed grade -062E targeted for 3200 MT/s operation with timing of CL22-nRCD-nRP (13.75 ns cycle time).
• Clock & Timing  1.6 GHz clock frequency (DDR4 data rate 3200 MT/s) and key timing parameters set to 13.75 ns for cycle time, RCD, and RP.
• Voltage & I/O  VDD = VDDQ = 1.2V operation (range 1.14–1.26V) with 1.2V VDDQ-terminated I/O as specified by DDR4 standards.
• Package  96-ball FBGA, low-profile option (7.5 mm × 13 mm × 1.2 mm per datasheet revision :F), JEDEC-standard ball-out and Pb-free package notation.
• Temperature & Refresh  Operating temperature 0°C to 95°C. Refresh requirements: 0°C–85°C: 8192 refresh cycles/64 ms; 85°C–95°C: 8192 refresh cycles/32 ms.
• Interface & Addressing  Parallel DDR4 interface with bank-group addressing (BG[1:0]), BA[1:0] bank addresses, 17-bit row addressing, 10-bit column addressing and 1KB page size per bank.
• Calibration & Controls  Includes an extra ZQ connection for faster ZQ calibration and requires BG1 control for x8 addressing modes as documented in the datasheet.

Unique Advantages

• High-density x16 in compact package: 32 Gbit capacity in a 96-ball FBGA (7.5 × 13 mm) provides substantial memory density in a low-profile footprint.
• Verified DDR4-3200 timing: Speed grade -062E targets 3200 MT/s with CL22 and 13.75 ns cycle time for predictable high-speed operation.
• Standard 1.2V DDR4 operation: VDD/VDDQ = 1.2V (1.14–1.26V) and VDDQ-terminated I/O for compatibility with DDR4 power domains.
• JEDEC-standard ball-out: Standardized FBGA ball mapping supports established PCB layouts and assembly flows.
• Temperature and refresh options documented: Operating range to 95°C with explicit refresh-cycle requirements for both 0°C–85°C and 85°C–95°C intervals.
• TwinDie integration: Two x8 die combined to deliver x16 functionality while maintaining documented calibration and control signals (ZQ, BG1).

Why Choose IC DRAM 32GBIT PARALLEL 96FBGA?

The MT40A2G16TBB-062E:F TR positions as a high-density DDR4 x16 solution with documented DDR4-3200 timing, standard 1.2V operation, and a compact 96-ball FBGA footprint. Its TwinDie single-rank architecture and JEDEC-standard ball-out provide a clear specification set for designs that require predictable DDR4 performance and integration into established board layouts.

This device is suited for designs that need 32 Gbit DDR4 capacity with explicit timing, voltage, package, and temperature specifications as provided in the product datasheet and technical documentation.

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