MT40A4G8BAF-062E:B TR

IC DRAM 32GBIT PARALLEL 78FBGA
Part Description

IC DRAM 32GBIT PARALLEL 78FBGA

Quantity 877 Available (as of May 5, 2026)
Product CategoryMemory
ManufacturerMicron Technology Inc.
Manufacturing StatusObsolete
Manufacturer Standard Lead TimeRFQ
Datasheet

Specifications & Environmental

Device Package78-FBGA (10.5x11)Memory FormatDRAMTechnologySDRAM - DDR4
Memory Size32 GbitAccess Time13.75 nsGradeExtended / Automotive-like
Clock Frequency1.6 GHzVoltage1.14V ~ 1.26VMemory TypeNon-Volatile
Operating Temperature0°C ~ 95°C (TC)Write Cycle Time Word PageN/APackaging78-TFBGA
Mounting MethodNon-VolatileMemory InterfaceParallelMemory Organization4G x 8
Moisture Sensitivity LevelN/ARoHS ComplianceROHS CompliantREACH ComplianceREACH Unaffected
QualificationN/AECCNOBSOLETEHTS Code8542.32.0071

Overview of MT40A4G8BAF-062E:B TR – IC DRAM 32GBIT PARALLEL 78FBGA

The MT40A4G8BAF-062E:B TR is a 32 Gbit DRAM device from Micron's TwinDie™ series built on DDR4 SDRAM technology. It provides a 4G × 8 memory organization in a parallel memory interface and is offered in a 78-TFBGA package.

Designed for systems that require high-density DDR4 parallel memory, this device delivers specified electrical and thermal characteristics including a 1.6 GHz clock frequency, 13.75 ns access time, a 1.14–1.26 V supply range, and an operating temperature range of 0°C to 95°C (TC).

Key Features

  • Core & Architecture TwinDie™ DDR4 SDRAM architecture delivering 32 Gbit capacity with a 4G × 8 organization.
  • Performance 1.6 GHz clock frequency and 13.75 ns access time for the device's specified timing profile.
  • Memory Type & Format Specified as Non-Volatile and formatted as DRAM with a parallel memory interface.
  • Power Narrow supply voltage range of 1.14 V to 1.26 V to support predictable power design.
  • Package 78-TFBGA / 78-FBGA (10.5 × 11 mm) supplier package for compact board-level integration.
  • Operating Conditions Specified operating temperature range of 0°C to 95°C (TC).

Typical Applications

  • High-density memory subsystems — Use where a 32 Gbit DDR4 parallel memory supply is required for system-level memory expansion.
  • Space-constrained board designs — 78-FBGA (10.5 × 11) package enables integration into compact PCB layouts.
  • Thermally controlled environments — Devices operating within 0°C to 95°C (TC) can utilize the defined thermal specifications for system thermal planning.

Unique Advantages

  • High-density TwinDie architecture: 32 Gbit capacity in a single device reduces the number of discrete memory components required on the board.
  • DDR4 timing and frequency: 1.6 GHz clock frequency and 13.75 ns access time provide the device's stated performance characteristics.
  • Compact BGA footprint: 78-FBGA (10.5 × 11) package supports smaller form-factor designs and denser component placement.
  • Controlled supply range: 1.14–1.26 V voltage range aids in predictable power budgeting and margin planning.
  • Defined operating temperature: 0°C to 95°C (TC) specification supports deployment in a wide set of thermal conditions.

Why Choose IC DRAM 32GBIT PARALLEL 78FBGA?

The MT40A4G8BAF-062E:B TR positions itself as a high-density DDR4 parallel DRAM solution in Micron's TwinDie™ series, combining a 32 Gbit memory organization with defined timing, voltage, and thermal specifications. It is suited to designs that require a compact 78-FBGA package and explicit electrical and environmental parameters.

For engineering teams specifying memory capacity, timing, supply voltage, and operating temperature, this device provides clear, verifiable characteristics to support design decisions and system integration.

Request a quote or submit an inquiry to receive pricing and availability information for the MT40A4G8BAF-062E:B TR.

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