MT40A4G8KVA-083H:G TR

IC DRAM 32GBIT PAR 1.2GHZ 78FBGA
Part Description

IC DRAM 32GBIT PAR 1.2GHZ 78FBGA

Quantity 524 Available (as of May 5, 2026)
Product CategoryMemory
ManufacturerMicron Technology Inc.
Manufacturing StatusObsolete
Manufacturer Standard Lead TimeRFQ
Datasheet

Specifications & Environmental

Device Package78-FBGA (8x12)Memory FormatDRAMTechnologySDRAM - DDR4
Memory Size32 GbitAccess TimeN/AGradeExtended / Automotive-like
Clock Frequency1.2 GHzVoltage1.14V ~ 1.26VMemory TypeVolatile
Operating Temperature0°C ~ 95°C (TC)Write Cycle Time Word PageN/APackaging78-TFBGA
Mounting MethodVolatileMemory InterfaceParallelMemory Organization4G x 8
Moisture Sensitivity Level3 (168 Hours)RoHS ComplianceROHS3 CompliantREACH ComplianceREACH Unaffected
QualificationN/AECCNEAR99HTS Code8542.32.0036

Overview of MT40A4G8KVA-083H:G TR – IC DRAM 32GBIT PAR 1.2GHZ 78FBGA

The MT40A4G8KVA-083H:G TR is a 32 Gbit DDR4 SDRAM device configured as 4G x 8 with a parallel memory interface. It is supplied in a 78-TFBGA package and operates with a 1.2 GHz clock frequency.

This device is intended for use where a compact, high-density parallel DDR4 DRAM component is required, providing defined electrical and thermal operating ranges for system integration.

Key Features

  • Memory Core DDR4 SDRAM technology with a 4G × 8 memory organization delivering a total memory size of 32 Gbit.
  • Interface & Frequency Parallel memory interface operating at a clock frequency of 1.2 GHz.
  • Power Specified supply voltage range of 1.14 V to 1.26 V for device operation.
  • Package 78-TFBGA package (supplier device package: 78-FBGA (8×12)) for compact board-level integration.
  • Operating Temperature Specified case temperature range of 0°C to 95°C (TC).
  • Memory Type Volatile DRAM format suitable for system memory applications.
  • Manufacturer Produced by Micron Technology Inc.

Typical Applications

  • Memory subsystems — Used as a high-density parallel DDR4 DRAM component within system memory designs.
  • Compact board-level designs — 78-TFBGA packaging supports space-constrained PCB layouts requiring 32 Gbit memory.
  • Thermally specified systems — Suited for designs that operate within the device's 0°C to 95°C case temperature range.

Unique Advantages

  • High memory density: 32 Gbit capacity in a single 4G × 8 DDR4 device reduces the number of memory components required on-board.
  • Defined high-frequency operation: 1.2 GHz clock frequency provides a clear performance target for system timing design.
  • Compact FBGA package: 78-TFBGA (8×12) footprint enables integration into space-limited designs.
  • Specified supply range: 1.14 V to 1.26 V supply requirement supports precise power budgeting during system design.
  • Operational temperature specification: Rated for 0°C to 95°C (TC), allowing designers to target applications within this thermal range.
  • Established manufacturer: Provided by Micron Technology Inc., ensuring traceability to a recognized memory supplier.

Why Choose IC DRAM 32GBIT PAR 1.2GHZ 78FBGA?

The MT40A4G8KVA-083H:G TR positions as a high-density DDR4 parallel DRAM option for designs that require a 32 Gbit memory element in a compact FBGA package. Its defined electrical and thermal specifications—1.2 GHz clock frequency, 1.14 V–1.26 V supply range, and 0°C–95°C case temperature—facilitate predictable system integration.

This device is suitable for engineers and procurement teams specifying parallel DDR4 memory where capacity, package footprint, and stated operating ranges are primary selection criteria. Sourcing from Micron Technology Inc. provides component-level provenance for production planning and inventory management.

Request a quote or contact sales to discuss availability, lead times, and pricing for the MT40A4G8KVA-083H:G TR.

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