MT40A8G4BAF-062E:B TR

IC DRAM 32GBIT PARALLEL 78FBGA
Part Description

IC DRAM 32GBIT PARALLEL 78FBGA

Quantity 516 Available (as of May 5, 2026)
Product CategoryMemory
ManufacturerMicron Technology Inc.
Manufacturing StatusObsolete
Manufacturer Standard Lead TimeRFQ
Datasheet

Specifications & Environmental

Device Package78-FBGA (10.5x11)Memory FormatDRAMTechnologySDRAM - DDR4
Memory Size32 GbitAccess Time13.75 nsGradeExtended / Automotive-like
Clock Frequency1.6 GHzVoltage1.14V ~ 1.26VMemory TypeNon-Volatile
Operating Temperature0°C ~ 95°C (TC)Write Cycle Time Word PageN/APackaging78-TFBGA
Mounting MethodNon-VolatileMemory InterfaceParallelMemory Organization8G x 4
Moisture Sensitivity LevelN/ARoHS ComplianceUnknownREACH ComplianceREACH Unknown
QualificationN/AECCNOBSOLETEHTS Code8542.32.0071

Overview of MT40A8G4BAF-062E:B TR – IC DRAM 32GBIT PARALLEL 78FBGA

The MT40A8G4BAF-062E:B TR is a 32 Gbit DRAM device from Micron Technology Inc.'s TwinDie™ series. It is specified as DDR4 SDRAM with a parallel memory interface and a memory organization of 8G x 4.

Designed for high-density parallel memory applications, the device offers a 1.6 GHz clock frequency, 13.75 ns access time, and operates from 1.14 V to 1.26 V over an operating temperature range of 0°C to 95°C (TC). It is supplied in a 78-TFBGA package (78-FBGA (10.5x11)).

Key Features

  • Memory Architecture  DDR4 SDRAM in a DRAM format with a memory organization of 8G x 4, providing 32 Gbit total capacity.
  • Series  Part of Micron's TwinDie™ series, as specified in the product identification.
  • Performance  1.6 GHz clock frequency and a specified access time of 13.75 ns for timing-sensitive applications.
  • Power  Specified voltage supply range of 1.14 V to 1.26 V.
  • Package  78-TFBGA package, listed as 78-FBGA (10.5x11) for compact board-level integration.
  • Operating Temperature  Rated for operation from 0°C to 95°C (TC).
  • Interface  Parallel memory interface as specified in the product description and specifications.
  • Memory Type / Mounting  Specified as Non-Volatile in the memory type and mounting type fields of the product specification.

Unique Advantages

  • High memory density: 32 Gbit capacity (8G x 4) supports designs requiring substantial on-board DRAM storage.
  • DDR4 performance: 1.6 GHz clock frequency and 13.75 ns access time provide defined timing characteristics for parallel memory use.
  • Compact FBGA footprint: 78-TFBGA (78-FBGA (10.5x11)) package delivers a small form factor for space-constrained PCB layouts.
  • Narrow voltage window: 1.14 V to 1.26 V supply range enables predictable power supply planning.
  • Wide operating temperature: 0°C to 95°C (TC) supports a range of thermal environments specified for the device.

Why Choose IC DRAM 32GBIT PARALLEL 78FBGA?

The MT40A8G4BAF-062E:B TR positions itself as a high-density DDR4 parallel DRAM option in a compact 78-TFBGA package. Its specified clock frequency, access time, and voltage range provide clear electrical and timing parameters for system integration.

Backed by Micron Technology Inc., this device is suited to designs that require 32 Gbit of parallel DRAM capacity with defined performance and thermal specifications. Its form factor and operating characteristics offer predictable integration for qualified system environments.

Request a quote or submit an inquiry to obtain pricing and availability for the MT40A8G4BAF-062E:B TR.

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