MT40A4G8NEA-062E:F

The MT40A4G8NEA-062E:F is a Micron TwinDie™ DDR4 SDRAM device providing 32 Gbit of volatile memory in a 4G × 8 organization. It implements a parallel memory interface in a 78-TFBGA package (78-FBGA, 7.5 × 11 mm) for compact board-level integration.

Key electrical and timing characteristics include a 1.6 GHz clock frequency, 13.75 ns access time, and a supply voltage range of 1.14 V–1.26 V. The device is specified for operation from 0 °C to 95 °C (TC), suited to designs that require high-density DDR4 DRAM in a small footprint.

Key Features

• Technology DDR4 SDRAM implemented in Micron TwinDie™ architecture, providing a 32 Gbit volatile memory device organized as 4G × 8.
• Performance Clock frequency of 1.6 GHz with an access time of 13.75 ns, offering defined DDR4 timing characteristics for parallel memory systems.
• Interface Parallel memory interface suitable for designs that use parallel DRAM architectures and standard DDR4 signaling constraints.
• Power Supply voltage range of 1.14 V to 1.26 V to align with DDR4 power rails.
• Package 78-TFBGA (78-FBGA, 7.5 × 11 mm) BGA package for ball-grid mounting and dense PCB placement.
• Operating Temperature Specified operating temperature range of 0 °C to 95 °C (TC) for thermally constrained board environments.

Typical Applications

• High-density memory subsystems Provides 32 Gbit DDR4 capacity in a compact 78-FBGA footprint for board-level memory assemblies.
• Memory module and controller integration Suitable as a component in module or controller designs that require parallel DDR4 x8 devices.
• Compact board designs 78-TFBGA package and TwinDie™ organization enable high capacity where PCB area is limited.

Unique Advantages

• High density (32 Gbit): Enables compact, high-capacity memory implementations using a single 4G × 8 DDR4 device.
• Defined DDR4 timing: 1.6 GHz clock frequency and 13.75 ns access time provide clear timing targets for system design and validation.
• Narrow DDR4 voltage range: 1.14 V–1.26 V supply aligns with standard DDR4 power rails for predictable power integration.
• Compact BGA package: 78-TFBGA (7.5 × 11 mm) reduces PCB footprint while supporting ball-grid mounting for dense board layouts.
• Wide operating temperature: Specified 0 °C to 95 °C (TC) range supports deployment in thermally varied environments.

Why Choose IC DRAM 32GBIT PARALLEL 78FBGA?

The MT40A4G8NEA-062E:F positions itself as a straightforward, high-density DDR4 memory building block for designs that require 32 Gbit capacity in a compact BGA package. Its TwinDie™ DDR4 implementation, defined timing (1.6 GHz clock, 13.75 ns access), and DDR4 supply range simplify integration into parallel memory architectures.

This device is appropriate for engineers and procurement teams specifying high-capacity DDR4 components for compact or dense board designs, where consistent electrical and thermal parameters (1.14 V–1.26 V supply, 0 °C–95 °C operation) are required.

Request a quote or contact sales to discuss availability, lead times, and technical questions about the MT40A4G8NEA-062E:F.