MT40A4G8NEA-062E:F TR

The MT40A4G8NEA-062E:F TR is a 32 Gbit TwinDie™ DDR4 SDRAM organized as 4G x 8 with a parallel memory interface. It combines two 16Gb DDR4 die in a dual‑rank configuration to deliver high density DDR4 memory in a 78-ball TFBGA package.

Designed for systems that require high-density, dual‑rank DDR4 memory, this device provides JEDEC‑standard ballout, 1.2 V class operation (1.14–1.26 V), and a commercial operating temperature range up to 95°C for board‑level integration where a compact FBGA package and high data rate are required.

Key Features

• Architecture  TwinDie™ implementation using two 16Gb Micron DDR4 die to form a 32Gb device with two ranks (dual CS#, ODT, and CKE balls).
• Memory Organization  128M x 8 organization (4G x 8) with 16 banks per die and bank grouping to support concurrent bank operation.
• DDR4 Performance  Speed grade -062E supports DDR4-3200 data rate with target timing of CL‑22 and key timing parameters (tAA, tRCD, tRP) at 13.75 ns.
• Interface  Parallel DDR4 SDRAM interface with VDDQ‑terminated I/O at 1.2 V nominal.
• Voltage  VDD = VDDQ = 1.2 V operation with specified supply range of 1.14 V to 1.26 V.
• Package  78‑ball TFBGA (78‑FBGA NEA: 7.5 mm × 11 mm × 1.2 mm) low‑profile package for board‑level mounting.
• Temperature & Refresh  Commercial temperature range TC = 0°C to 95°C; 8192 refresh cycles in 64 ms (0–85°C) and 8192 refresh cycles in 32 ms (85–95°C).
• Timing  Clock frequency listed as 1.6 GHz (DDR data rate 3200 MT/s), with access times specified at 13.75 ns for key cycles.

Typical Applications

• High‑density DDR4 memory subsystems  For designs requiring a 32 Gbit parallel DDR4 device in a dual‑rank configuration for increased memory density.
• Board‑level memory modules  Integration into compact FBGA board designs where a low‑profile 78‑ball package is required.
• High‑data‑rate interfaces  Systems targeting DDR4‑3200 performance with CL‑22 timing and 1.2 V I/O termination.

Unique Advantages

• Dual‑rank TwinDie™ construction: Provides two ranks in a single 32Gb package using Micron 16Gb die, enabling higher memory density without additional components.
• JEDEC‑standard ballout and low‑profile FBGA: Simplifies board implementation with a standard 78‑ball TFBGA footprint (7.5 mm × 11 mm × 1.2 mm).
• High data rate with defined timing: Supports DDR4‑3200 (speed grade -062E) with CL‑22 and 13.75 ns key timing parameters for predictable performance.
• 1.2 V nominal operation: VDD and VDDQ operation in the 1.14–1.26 V range with VDDQ‑terminated I/O for standard DDR4 signaling.
• Commercial temperature range to 95°C: Operable from 0°C to 95°C with specified refresh requirements for elevated temperature operation.

Why Choose MT40A4G8NEA-062E:F TR?

The MT40A4G8NEA-062E:F TR positions itself as a compact, high‑density DDR4 memory device that delivers two ranks of Micron 16Gb DDR4 die in a single 78‑ball FBGA package. Its DDR4‑3200 speed grade, defined CL‑22 timing, and 1.2 V class operation make it suitable for designs that need predictable DDR4 performance and a low‑profile board footprint.

This device is appropriate for engineers and designers building memory subsystems or board‑level solutions that require increased memory capacity, JEDEC‑standard ballout, and operation across a commercial temperature range. The TwinDie approach provides density and rank flexibility while maintaining standard DDR4 electrical and timing characteristics.

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