MT40A8G4CLU-075H:E

The MT40A8G4CLU-075H:E is a 32 Gbit DRAM device implemented in SDRAM DDR4 technology and supplied in a 78-TFBGA package. It is organized as 8G x 4 with a parallel memory interface and specified electrical and thermal operating ranges.

Designed for applications that require a high-density parallel DDR4 memory component, the device offers a 1.33 GHz clock frequency, an access time of 27 ns, and an operating voltage range of 1.14 V to 1.26 V. The package and thermal characteristics support integration into compact assemblies with defined thermal conditions.

Key Features

• Memory — 32 Gbit DDR4 SDRAM 32 Gbit capacity organized as 8G × 4 using SDRAM DDR4 technology.
• Interface — Parallel Parallel memory interface for designs that require direct DDR4 parallel connectivity.
• Performance Specified clock frequency of 1.33 GHz and an access time of 27 ns to characterize data timing.
• Power Operating supply voltage range of 1.14 V to 1.26 V to match DDR4 system rails.
• Package & Mounting Supplied in a 78-TFBGA / 78-FBGA (7.5 × 11 mm) package for surface-mount assembly.
• Temperature Rated operating temperature range of 0°C to 95°C (TC) for thermal planning.
• Memory Type & Format Specified as Non-Volatile (MemoryType) with DRAM memory format and SDRAM - DDR4 technology.

Typical Applications

• Systems requiring parallel DDR4 memory Use where a 32 Gbit, 8G × 4 DDR4 parallel memory device is required for board-level integration.
• High-density module designs Integration into compact modules benefitting from the 78-FBGA (7.5 × 11 mm) package footprint.
• Embedded assemblies with defined thermal envelopes Suitable for designs operating within a 0°C to 95°C case temperature range.

Unique Advantages

• High memory density: 32 Gbit capacity supports higher memory requirements without increasing component count.
• DDR4 timing characteristics: 1.33 GHz clock and 27 ns access time provide defined performance parameters for system timing design.
• Compact BGA package: 78-TFBGA / 78-FBGA (7.5 × 11 mm) package enables space-efficient board layouts.
• Narrow supply range: 1.14 V–1.26 V supply specification aligns with DDR4 power rails for straightforward power design.
• Specified operating temperature: 0°C–95°C (TC) rating aids thermal planning and reliability assessments.

Why Choose MT40A8G4CLU-075H:E?

The MT40A8G4CLU-075H:E delivers a high-density DDR4 DRAM option in a compact 78-FBGA package, with clear electrical and timing specifications that support predictable integration into parallel-DDR4 system designs. Its combination of capacity, clock specification, access time, and defined voltage and temperature ranges make it suitable for engineers targeting dense memory implementations with known thermal and power constraints.

This device is appropriate for design teams and procurement focused on components with explicit DDR4 timing, voltage, and packaging parameters, offering long-term value through straightforward specification-driven integration.

Request a quote or submit an inquiry to receive pricing, availability, and ordering information for MT40A8G4CLU-075H:E.