MT40A8G4NEA-062E:F

The MT40A8G4NEA-062E:F is a 32Gbit TwinDie™ DDR4 SDRAM organized as 8G × 4 with a parallel DDR4 interface. It implements Micron's TwinDie architecture (two 16Gb dies) to provide two ranks with discrete control signals and ODT/CKE balls for rank-level operation.

Designed for high-density DDR4 memory subsystems, this device targets applications that require JEDEC-standard ball-out, a low-profile 78-ball FBGA package (7.5 × 11 mm), DDR4-3200 timing, and industry-standard 1.2V class operation (1.14–1.26V).

Key Features

• Memory Type & Architecture  32Gbit DDR4 SDRAM (TwinDie) organized as 8G × 4 with two ranks—each rank contains 4 groups of 4 internal banks for concurrent operation.
• Performance  Speed grade -062E supports DDR4-3200 (3200 MT/s) with target timing CL-tRCD-tRP = 22-22-22 and key timing parameter tAA = 13.75 ns.
• Voltage  Nominal VDD = VDDQ = 1.2V with allowable operating range 1.14–1.26V.
• Package  78-ball FBGA (NEA variant: 7.5 × 11 × 1.2 mm low-profile package) with JEDEC-standard ball-out.
• Rank & I/O Control  Two ranks included (dual CS#, ODT, and CKE balls) to support rank-level control and addressability.
• Temperature & Refresh  Operating temperature TC = 0°C to 95°C; 8192 refresh cycles in 64 ms for 0–85°C and 8192 refresh cycles in 32 ms for 85–95°C.
• Memory Interface & Format  Parallel DDR4 SDRAM interface in x4 configuration suitable for high-density memory implementations.

Typical Applications

• High-density memory modules  Use in compact module designs that require 32Gbit DDR4 capacity in a low-profile 78-ball FBGA footprint.
• Multi-rank memory subsystems  Two-rank architecture enables rank-level control for systems that leverage concurrent bank operation and rank interleaving.
• Space-constrained PCBs  Low-profile 7.5 × 11 mm FBGA package supports board designs with limited vertical clearance.

Unique Advantages

• High density in compact package: 32Gbit capacity in a 78-ball FBGA (7.5 × 11 mm) allows significant memory density while minimizing board area and height.
• TwinDie two-rank architecture: Built from two 16Gb Micron dies to provide dual-rank operation with separate CS#, ODT, and CKE balls for rank-level management.
• JEDEC-standard ball‑out: Standardized FBGA ball placement simplifies PCB layout and supports established assembly processes.
• DDR4-3200 timing: Speed grade -062E delivers 3200 MT/s operation with CL = 22 and a tAA of 13.75 ns for predictable timing behavior.
• Industry-standard supply voltage: 1.2V class operation (1.14–1.26V) aligns with common DDR4 power domains.
• Extended operating temperature: Rated TC = 0°C to 95°C with specified refresh rates for elevated-temperature operation.

Why Choose MT40A8G4NEA-062E:F?

MT40A8G4NEA-062E:F positions itself as a high-density, two‑rank DDR4 SDRAM solution that combines Micron's TwinDie approach with JEDEC-standard FBGA packaging and DDR4-3200 timing. Its specification set—including 32Gbit capacity, x4 organization, dual-rank control, and 1.2V operation—makes it suitable for designs that require compact, high-capacity DDR4 memory with predictable timing and standard ball-out.

This device is suited to development teams and procurement for systems needing scalable memory capacity in a low-profile package, while benefiting from Micron’s documented die-based TwinDie implementation and defined operating/refresh parameters.

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