MT46V128M4BN-6:F

The MT46V128M4BN-6:F is a 512 Mbit DDR SDRAM organized as 128M × 4 with a parallel memory interface in a 60-ball FBGA package. It implements an internal pipelined double-data-rate architecture that provides two data accesses per clock cycle and is targeted for systems requiring compact, synchronous parallel DRAM.

Designed for commercial temperature operation (0°C to 70°C) and 2.3 V to 2.7 V supply ranges, this device delivers predictable timing and integration for embedded and system memory applications that require DDR performance and byte-level control.

Key Features

• Core Architecture  Internal pipelined DDR architecture with two data accesses per clock cycle and four internal banks for concurrent operation.
• Memory Organization  512 Mbit capacity arranged as 128M × 4 with 4 banks; byte-wide organization for parallel DDR operation.
• Performance & Timing  Clock frequency rating up to 167 MHz (DDR), access time 700 ps, programmable burst lengths of 2, 4, or 8, and selectable CAS latencies per speed grade.
• Interface & Signals  Differential clock inputs (CK, CK#), bidirectional data strobe (DQS) source-synchronous capture, and data mask (DM) for masked writes.
• Power  VDD / VDDQ nominal 2.5 V (documented VDD = +2.5 V ±0.2 V) compatible with 2.3 V to 2.7 V supply operation.
• Reliability & Refresh  Supports auto refresh (8K refresh count) and self refresh (options vary by device revision), with tRAS lockout and concurrent auto precharge support.
• Package  60-ball FBGA (10 mm × 12.5 mm) package (60-TFBGA / 60-FBGA) suitable for compact board designs.
• Operating Range  Commercial temperature rating: 0°C to +70°C (TA).

Typical Applications

• Embedded System Memory  Used as on-board DDR SDRAM for systems that require 512 Mbit parallel memory with predictable timing and banked concurrency.
• Consumer Electronics  Provides synchronous DDR storage for consumer-grade devices operating within the specified commercial temperature range.
• Board-Level DRAM Expansion  Suitable for compact PCB designs needing a 60-ball FBGA 512 Mbit DDR device with 2.5 V I/O.

Unique Advantages

• DDR Source-Synchronous Capture: DQS is transmitted/received with data enabling source-synchronous data capture and improved read/write timing alignment.
• Flexible Burst and Bank Control: Programmable burst lengths (2, 4, 8) and four internal banks support efficient access patterns and concurrent operation.
• Standardized 2.5 V I/O: VDD/VDDQ = 2.5 V ± tolerances provides compatibility with SSTL_2-type signaling documented in the datasheet.
• Compact FBGA Package: 60-ball FBGA (10 × 12.5 mm) allows dense board layouts while maintaining parallel DDR connectivity.
• Documented Timing Options: Multiple speed-grade/timing options (including -6 speed grade at CL = 2.5, 167 MHz) give designers explicit timing windows for system timing closure.

Why Choose IC DRAM 512MBIT PAR 60FBGA?

The MT46V128M4BN-6:F delivers a straightforward, parallel DDR SDRAM building block with clear electrical and timing specifications—512 Mbit capacity in a 128M × 4 organization, defined supply range (2.3 V–2.7 V), and commercial temperature rating. Its source-synchronous DQS design, differential clock inputs, and programmable burst lengths support deterministic memory interfaces in compact BGA form factors.

This device is suitable for designers and procurement teams specifying parallel DDR memory for embedded systems and consumer-grade applications where documented timing, banked concurrency, and a 60-ball FBGA footprint are required for integration and system-level timing planning.

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