MT46V128M4FN-75:D TR

The MT46V128M4FN-75:D TR from Micron Technology Inc. is a 512 Mbit DDR SDRAM organized as 128M × 4 with a parallel memory interface. Packaged in a 60-TFBGA (60-FBGA, 10×12.5) form factor, this device targets designs that require board-level DRAM capacity in a compact footprint.

Key attributes include a 133 MHz clock frequency, 750 ps access time, a 15 ns write-cycle time for word/page operations, and a 2.3 V–2.7 V supply range. The device is specified for operation over a 0 °C to 70 °C ambient temperature range.

Key Features

• Memory Technology — DDR SDRAM (SDRAM - DDR) offering volatile, parallel DRAM storage with a 512 Mbit capacity.
• Organization & Capacity — Configured as 128M × 4 to provide 512 Mbit of memory in a compact single-device solution.
• Performance — 133 MHz clock frequency with a 750 ps access time and a 15 ns write-cycle time (word/page) for predictable timing characteristics.
• Power — Operates from a 2.3 V to 2.7 V supply range, enabling compatibility with low-voltage system domains.
• Package & Mounting — 60-TFBGA package (60-FBGA, 10×12.5) for high-density board integration.
• Operating Range — Rated for ambient operation from 0 °C to 70 °C (TA).

Typical Applications

• Parallel memory expansion — Provides 512 Mbit of DDR SDRAM for systems requiring parallel DRAM interfaces and board-level memory capacity.
• Buffer and temporary storage — Suited for designs that need volatile, high-speed buffer memory with defined access and cycle timings.
• Compact board designs — The 60-FBGA (10×12.5) package supports high-density assemblies where PCB area is constrained.

Unique Advantages

• 512 Mbit density in a single package: Delivers substantial DRAM capacity using a single 128M × 4 device to simplify board-level memory architectures.
• Defined timing performance: 133 MHz clock, 750 ps access time and 15 ns write-cycle time provide clear timing parameters for system design and validation.
• Low-voltage operation: 2.3 V–2.7 V supply range supports integration with low-voltage memory domains and power rails.
• Compact 60-FBGA footprint: 60-TFBGA (10×12.5) package enables space-efficient placement on dense PCBs.
• Specified ambient range: Rated for 0 °C to 70 °C operation to match standard commercial thermal environments.

Why Choose MT46V128M4FN-75:D TR?

The MT46V128M4FN-75:D TR positions itself as a straightforward DDR SDRAM option for designs that need 512 Mbit of parallel DRAM in a compact BGA package. Its documented clock, access, and write-cycle timings along with a defined supply voltage range make it suitable for engineers seeking predictable memory performance and integration at the board level.

This device is appropriate for projects prioritizing board-area efficiency, clear electrical requirements, and commercial-temperature operation. Choosing this Micron device supports designs that require a known-density, organized DRAM building block with manufacturable packaging dimensions.

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