MT46V128M4FN-6:D TR

The MT46V128M4FN-6:D TR is a 512 Mbit DDR SDRAM organized as 128M × 4 with a parallel interface in a 60-ball FBGA (10 mm × 12.5 mm) package. It implements an internal pipelined DDR architecture that provides two data accesses per clock cycle and supports source-synchronous data capture.

Targeted for designs requiring compact, commercial-temperature DDR memory, the device operates at a captured clock frequency point of 167 MHz (speed grade -6) with a VDD/VDDQ operating range of 2.3 V to 2.7 V and an operating temperature of 0 °C to 70 °C.

Key Features

• DDR Architecture  Internal pipelined double-data-rate design delivering two data transfers per clock cycle for increased throughput.
• Memory Organization  512 Mbit capacity configured as 128M × 4 with four internal banks for concurrent operation.
• Performance & Timing  Rated clock frequency 167 MHz (speed grade -6) with an access time of 700 ps and programmable burst lengths of 2, 4, or 8.
• Interface & Signaling  Parallel memory interface with differential clock inputs (CK/CK#) and bidirectional data strobe (DQS) for source-synchronous data capture and alignment.
• Power  Supports VDD and VDDQ in the 2.3 V to 2.7 V range; 2.5 V I/O signaling (SSTL_2 compatible as noted in device options).
• Data Integrity & Control  DLL to align DQ/DQS with CK, data mask (DM) for write masking, auto-refresh and programmable refresh timing (8192-cycle refresh).
• Package  60‑TFBGA / 60‑ball FBGA (10 mm × 12.5 mm) surface-mount package for compact board-level integration.
• Operating Environment  Commercial temperature rating: 0 °C to +70 °C (TA).

Typical Applications

• System Memory (DDR SDRAM)  Provides 512 Mbit parallel DDR memory capacity for designs that require DDR x4 organization and source-synchronous data capture.
• Embedded Platforms  Compact 60‑ball FBGA package supports space-constrained boards that need pipelined DDR performance.
• Legacy DDR Modules  Speed-grade compatibility with standard DDR timing profiles (examples in datasheet include PC3200, PC2700, PC2100 compatibility entries).

Unique Advantages

• Double-data-rate throughput: Enables two data transfers per clock cycle, improving effective bandwidth without changing clock frequency.
• Source-synchronous capture with DQS: Bidirectional DQS and DLL alignment simplify timing margins for read/write data capture.
• Compact FBGA footprint: 60-ball (10 mm × 12.5 mm) package minimizes PCB area for embedded and space-constrained applications.
• Flexible refresh and burst options: Auto-refresh (8192-cycle) and programmable burst lengths (2/4/8) allow tuning for system memory patterns.
• Commercial temperature rating: Specified operation from 0 °C to 70 °C for standard commercial deployments.

Why Choose IC DRAM 512MBIT PAR 60FBGA?

The MT46V128M4FN-6:D TR is positioned as a compact, parallel DDR SDRAM option offering 512 Mbit capacity in a 128M × 4 organization. Its DDR architecture, DQS-based source-synchronous capture and DLL alignment deliver deterministic timing behavior at the rated 167 MHz clock point, while the 60-ball FBGA package supports dense board layouts.

This device is suited for designs that require a commercial-temperature, 2.3 V–2.7 V DDR memory solution with programmable burst lengths, auto-refresh support, and standard DDR timing compatibility. It provides a straightforward memory building block for embedded systems and other applications that match the specified electrical and thermal requirements.

If you need pricing, availability, or a quote for MT46V128M4FN-6:D TR, submit a request or contact sales to receive product and procurement information.